| Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+ a during the physical vapor transport growth of 4H–SiC M Dudley, F Wu, H Wang, S Byrappa, B Raghothamachar, G Choi, S Sun, ... Applied Physics Letters 98 (23), 2011 | 81 | 2011 |
| Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications M St G, EK Sanchez, DM Hansen, RD Drachev, G Chung, B Thomas, ... Journal of crystal growth 352 (1), 39-42, 2012 | 39 | 2012 |
| Characterization of threading dislocations in PVT-grown AlN substrates via X-ray topography and ray tracing simulation T Zhou, B Raghothamachar, F Wu, R Dalmau, B Moody, S Craft, ... Journal of electronic materials 43, 838-842, 2014 | 37 | 2014 |
| Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC H Wang, F Wu, S Byrappa, S Sun, B Raghothamachar, M Dudley, ... Applied Physics Letters 100 (17), 2012 | 28 | 2012 |
| Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of burgers vector in PVT-grown 4H-SiC FZ Wu, HH Wang, SY Byrapa, B Raghothamachar, M Dudley, E Sanchez, ... Materials Science Forum 717, 343-346, 2012 | 24 | 2012 |
| Formation mechanism of stacking faults in PVT 4H-SiC created by deflection of threading dislocations with Burgers vector c+ a M Dudley, HH Wang, FZ Wu, SY Byrapa, B Raghothamachar, G Choi, ... Materials Science Forum 679, 269-272, 2011 | 24 | 2011 |
| Analysis of dislocation behavior in low dislocation density, PVT-grown, four-inch silicon carbide single crystals M Dudley, S Byrappa, H Wang, F Wu, Y Zhang, B Raghothamachar, ... MRS Online Proceedings Library (OPL) 1246, 1246-B02-02, 2010 | 22 | 2010 |
| Basal plane dislocation multiplication via the hopping Frank-read source mechanism and observations of prismatic glide in 4H-SiC HH Wang, SY Byrapa, F Wu, B Raghothamachar, M Dudley, E Sanchez, ... Materials Science Forum 717, 327-330, 2012 | 21 | 2012 |
| The nucleation and propagation of threading dislocations with c-component of Burgers vector in PVT-grown 4H-SiC FZ Wu, M Dudley, HH Wang, SY Byrapa, S Sun, B Raghothamachar, ... Materials Science Forum 740, 217-220, 2013 | 19 | 2013 |
| Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+ a dislocations in 4H-SiC F Wu, S Byrappa, H Wang, Y Chen, B Raghothamachar, M Dudley, ... MRS Online Proceedings Library (OPL) 1433, mrss12-1433-h02-04, 2012 | 19 | 2012 |
| Direct determination of burgers vectors of threading mixed dislocations in 4H-SiC grown by PVT method J Guo, Y Yang, F Wu, J Sumakeris, R Leonard, O Goue, ... Journal of Electronic Materials 45, 2045-2050, 2016 | 17 | 2016 |
| Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography HH Wang, FZ Wu, M Dudley, B Raghothamachar, GY Chung, J Zhang, ... Materials Science Forum 778, 328-331, 2014 | 15 | 2014 |
| Deflection of Threading Dislocations with Burgers vector c/c+ a observed in 4H-SiC PVT–Grown Substrates with associated Stacking faults SY Byrapa, FZ Wu, HH Wang, B Raghothamachar, G Choi, S Sun, ... Materials Science Forum 717, 347-350, 2012 | 15 | 2012 |
| Using ray tracing simulations for direct determination of burgers vectors of threading mixed dislocations in 4h-sic c-plane wafers grown by pvt method JQ Guo, Y Yang, FZ Wu, JJ Sumakeris, RT Leonard, O Goue, ... Materials Science Forum 858, 15-18, 2016 | 11 | 2016 |
| Study of V and Y shape Frank-type Stacking Faults Formation in 4H-SiC epilayer HH Wang, FZ Wu, SY Byrapa, Y Yang, B Raghothamachar, M Dudley, ... Materials Science Forum 778, 332-337, 2014 | 10 | 2014 |
| Grazing incidence X-ray topographic studies of threading dislocations in hydrothermal grown ZnO single crystal substrates T Zhou, B Raghothamachar, F Wu, M Dudley MRS Online Proceedings Library (OPL) 1494, 121-126, 2013 | 10 | 2013 |
| Stacking fault formation via 2D nucleation in PVT grown 4H-SiC FZ Wu, HH Wang, Y Yang, JQ Guo, B Raghothamachar, M Dudley, ... Materials Science Forum 821, 85-89, 2015 | 9 | 2015 |
| Characterization of V-shaped defects in 4H-SiC homoepitaxial layers F Wu, H Wang, B Raghothamachar, M Dudley, G Chung, J Zhang, ... Journal of Electronic Materials 44, 1293-1299, 2015 | 8 | 2015 |
| Studies of the origins of half-loop arrays and interfacial dislocations observed in homoepitaxial layers of 4H-SiC H Wang, M Dudley, F Wu, Y Yang, B Raghothamachar, J Zhang, G Chung, ... Journal of Electronic Materials 44, 1268-1274, 2015 | 8 | 2015 |
| Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron x-ray topography and molten KOH etching H Wang, S Sun, M Dudley, S Byrappa, F Wu, B Raghothamachar, ... Journal of electronic materials 42, 794-798, 2013 | 8 | 2013 |
