| Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs B Paquette, B Ilahi, V Aimez, R Arès Journal of crystal growth 383, 30-35, 2013 | 24 | 2013 |
| Novel multijunction solar cell design for low cost, high concentration systems B Paquette, A Boucherif, V Aimez, R Arès Progress in Photovoltaics: Research and Applications 24 (2), 150-158, 2016 | 22 | 2016 |
| Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing B Ilahi, O Nasr, B Paquette, MHH Alouane, N Chauvin, B Salem, L Sfaxi, ... Journal of Alloys and Compounds 656, 132-137, 2016 | 12 | 2016 |
| Temperature mapping using single wavelength pyrometry during epitaxial growth B Paquette, B Gsib, R Arès Journal of Vacuum Science & Technology B 29 (6), 2011 | 7 | 2011 |
| Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells B Paquette, M DeVita, A Turala, G Kolhatkar, A Boucherif, A Jaouad, ... AIP Conference Proceedings 1556 (1), 48-52, 2013 | 6 | 2013 |
| Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions B Paquette, M DeVita, A Turala, G Kolhatkar, A Boucherif, A Jaouad, ... Journal of crystal growth 374, 1-4, 2013 | 6 | 2013 |
| Effect of dot-height truncation on the device performance of multilayer InAs/GaAs quantum dot solar cells J Zribi, B Ilahi, B Paquette, A Jaouad, O Thériault, K Hinzer, R Cheriton, ... IEEE Journal of Photovoltaics 6 (2), 584-589, 2016 | 5 | 2016 |
| Full-wafer thermal imaging in ultrahigh epitaxy tools B Paquette, A Fekecs, B Gsib, H Pelletier, R Arès Photonics North 2010 7750, 191-197, 2010 | 1 | 2010 |
| Corrigendum to “Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs”[J. Cryst. Growth 383C (2013) 30–35] B Paquette, B Ilahi, V Aimez, R Arès Journal of Crystal Growth, 342-343, 2014 | | 2014 |
| Bernard Paquette B Paquette, B Ilahi, D Morris, V Aimez, R Arès | | |
