Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures Y Ou, CF Pai, S Shi, DC Ralph, RA Buhrman Physical Review B 94 (14), 140414, 2016 | 132 | 2016 |
Fast low-current spin-orbit-torque switching of magnetic tunnel junctions through atomic modifications of the free-layer interfaces S Shi, Y Ou, SV Aradhya, DC Ralph, RA Buhrman Physical Review Applied 9 (1), 011002, 2018 | 107 | 2018 |
Strong spin Hall effect in the antiferromagnet PtMn Y Ou, S Shi, DC Ralph, RA Buhrman Physical Review B 93 (22), 220405, 2016 | 105 | 2016 |
Enhancing spin-orbit torque by strong interfacial scattering from ultrathin insertion layers L Zhu, L Zhu, S Shi, M Sui, DC Ralph, RA Buhrman Physical Review Applied 11 (6), 061004, 2019 | 64 | 2019 |
Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au0.25Pt0.75 L Zhu, L Zhu, S Shi, DC Ralph, RA Buhrman Advanced Electronic Materials 6 (2), 1901131, 2020 | 51 | 2020 |
Cryogenic memory architecture integrating spin Hall effect based magnetic memory and superconductive cryotron devices MH Nguyen, GJ Ribeill, MV Gustafsson, S Shi, SV Aradhya, AP Wagner, ... Scientific reports 10 (1), 248, 2020 | 42 | 2020 |
Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions GE Rowlands, SV Aradhya, S Shi, EH Yandel, J Oh, DC Ralph, ... Applied Physics Letters 110 (12), 2017 | 39 | 2017 |
Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy MH Nguyen, S Shi, GE Rowlands, SV Aradhya, CL Jermain, DC Ralph, ... Applied Physics Letters 112 (6), 2018 | 24 | 2018 |
All-spin-orbit switching of perpendicular magnetization M Kazemi, GE Rowlands, S Shi, RA Buhrman, EG Friedman IEEE Transactions on Electron Devices 63 (11), 4499-4505, 2016 | 23 | 2016 |
Nanosecond reversal of three-terminal spin-Hall-Effect memories sustained at cryogenic temperatures GE Rowlands, MH Nguyen, SV Aradhya, S Shi, CA Ryan, RA Buhrman, ... Physical Review Applied 15 (2), L021004, 2021 | 3 | 2021 |
Few-nanosecond pulse switching with low write error for in-plane nanomagnets using the spin-Hall effect S Aradhya, G Rowlands, S Shi, J Oh, DC Ralph, R Buhrman APS March Meeting Abstracts 2016, A18. 006, 2016 | 1 | 2016 |
Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions S Shi, RA Buhrman arXiv preprint arXiv:2204.07113, 2022 | | 2022 |
Very high spin Hall conductivities and spin Hall ratios in epitaxial Iridium di-oxide films A BOSE, J Nelson, X Zhang, R Jain, S Shi, D Schlom, D Ralph, D Muller, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
Maximizing the spin Hall ratio of Pt: Trade-off between intrinsic spin Hall conductivity and carrier lifetime L Zhu, L Zhu, S Shi, M Sui, D Ralph, R Buhrman Bulletin of the American Physical Society 65, 2020 | | 2020 |
Spin Orbit Torque Driven Magnetic Switching in Three Terminal Magnetic Tunnel Junctions S Shi Cornell University, 2019 | | 2019 |
Fast, reliable spin-orbit-torque switching in three terminal magnetic tunnel junctions with Hf dusting layer S Shi, Y Ou, DC Ralph, RA Buhrman Spintronics XI 10732, 168-177, 2018 | | 2018 |
How nanosecond magnetization dynamics during spin-Hall switching of in-plane MTJs enables a cryogenic memory cell with superconducting line drivers G Rowlands, E Toomey, A Wagner, G Ribeill, L Ranzani, MH Nguyen, ... APS March Meeting Abstracts 2018, F22. 010, 2018 | | 2018 |
Controlling nanosecond spin-orbit torque switching of three terminal magnetic tunnel junctions with geometry S Shi, D Ralph, R Buhrman APS March Meeting Abstracts 2018, F22. 007, 2018 | | 2018 |
Spin Torque Efficiency and Spin Transport In β-W and β-W(Ox) Thin Films R Tapping, Y Ou, S Shi, L Zhu, D Ralph, R Buhrman APS March Meeting Abstracts 2018, Y22. 010, 2018 | | 2018 |
Efficient Switching of 3-Terminal Magnetic Tunnel Junction Devices by the Giant Spin Hall Effect of Pt85Hf15 Alloy MH Nguyen, S Shi, SV Aradhya, DC Ralph, RA Buhrman THE SPIN HALL EFFECT IN PLATINUM/FERROMAGNET MULTILAYERS AND ITS APPLICATION …, 2017 | | 2017 |