| Gate-all-around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance S Singh, A Raman IEEE Transactions on Electron Devices 65 (7), 3026-3032, 2018 | 58 | 2018 |
| Design of area and power efficient modified carry select adder S Singh, D Kumar International Journal of Computer Applications 33 (3), 14-18, 2011 | 41 | 2011 |
| A novel high mobility In1-xGaxAs cylindrical-gate-nanowire FET for gas sensing application with enhanced sensitivity NK Singh, A Raman, S Singh, N Kumar Superlattices and Microstructures 111, 518-528, 2017 | 39 | 2017 |
| Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing N Jayaswal, A Raman, N Kumar, S Singh Superlattices and Microstructures 125, 256-270, 2019 | 31 | 2019 |
| A dopingless gate-all-around (GAA) gate-stacked nanowire FET with reduced parametric fluctuation effects S Singh, A Raman Journal of Computational Electronics 17 (3), 967-976, 2018 | 21 | 2018 |
| Design and analysis of gate engineered dual material gate double gate impact ionization metal oxide semiconductor LR Solay, S Singh, SI Amin, S Anand Transactions on Electrical and Electronic Materials 20, 132-140, 2019 | 13 | 2019 |
| Design of dual-gate P-type IMOS based industrial purpose pressure sensor LR Solay, S Singh, N Kumar, SI Amin, S Anand Silicon 13, 4633-4640, 2021 | 11 | 2021 |
| Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications K Kumar, A Raman, B Raj, S Singh, N Kumar Applied Physics A 126, 1-11, 2020 | 11 | 2020 |
| Nanocantilever tri-gate junctionless cuboidal nanowire-FET-based directional pressure sensor A Aggarwal, A Raman, N Kumar, S Singh Applied Physics A 125, 1-10, 2019 | 10 | 2019 |
| Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier S Singh, LR Solay, S Anand, N Kumar, R Ranjan, A Singh Micromachines 14 (7), 1357, 2023 | 9 | 2023 |
| Design and analysis of gate overlapped/underlapped NWFET based lable free biosensor S Alam, A Raman, B Raj, N Kumar, S Singh Silicon, 1-8, 2021 | 7 | 2021 |
| Design and investigation of pressure sensor based on charge plasma silicon NWFET with cylindrical gate diaphragm S Singh, A Raman Silicon 12 (10), 2479-2487, 2020 | 7 | 2020 |
| Design and analysis of pressure sensor based on MEMS cantilever structure and pocket doped DG-TFET K Rajasekhar, A Raman, N Kumar, S Singh, D Kakkar Journal of Nanoelectronics and Optoelectronics 13 (9), 1295-1304, 2018 | 7 | 2018 |
| Design and optimization analysis of dual material gate on DG-IMOS S Singh, A Raman, N Kumar Journal of Semiconductors 38 (12), 124003, 2017 | 7 | 2017 |
| Design of dopingless GaN nanowire FET with Low ‘Q’for high switching and RF applications S Singh, A Raman Silicon 14 (3), 1297-1307, 2022 | 5 | 2022 |
| Charge-Plasma Based Cylindrical Nanowire FET for Low-Noise and High Sensing S Singh, A Raman ECS Journal of Solid State Science and Technology 10 (2), 2021 | 5 | 2021 |
| Noise distortion analysis of the designed heterodielectric dual-material gate dopingless nanowire FET N Kumari, A Raman, D Kakkar, S Singh, N Kumar Journal of Electronic Materials 52 (5), 3253-3263, 2023 | 4 | 2023 |
| Lead zirconium titanate (PZT)-based gate-all-around negative-capacitance junctionless nanowire FET for distortionless low-power applications S Singh, S Singh, N Kumar, NK Singh, R Ranjan, S Anand Journal of Electronic Materials 51, 196-206, 2022 | 4 | 2022 |
| Linearity analysis of gate engineered Dopingless and Junctionless silicon nanowire FET S Singh, A Raman, N Kumar, R Ranjan, D Shekhar, S Anand 2019 6th International Conference on Signal Processing and Integrated …, 2019 | 3 | 2019 |
| Design and analysis of source engineered with high electron mobility material triple gate junctionless field effect transistor S Shringi, A Raman, S Singh, N Kumar Journal of Nanoelectronics and Optoelectronics 14 (6), 825-832, 2019 | 2 | 2019 |
Naveen KumarUniversity of GlasgowVerified email at glasgow.ac.uk
