| Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and during the physical vapor transport growth of 4H–SiC M Dudley, F Wu, H Wang, S Byrappa, B Raghothamachar, G Choi, S Sun, ... Applied Physics Letters 98 (23), 232110, 2011 | 81 | 2011 |
| Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications M St G, EK Sanchez, DM Hansen, RD Drachev, G Chung, B Thomas, ... Journal of Crystal Growth 352 (1), 39-42, 2012 | 39 | 2012 |
| Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC H Wang, F Wu, S Byrappa, S Sun, B Raghothamachar, M Dudley, ... Applied Physics Letters 100 (17), 172105, 2012 | 28 | 2012 |
| Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC FZ Wu, HH Wang, SY Byrapa, B Raghothamachar, M Dudley, ... Materials Science Forum 717, 343-346, 2012 | 24 | 2012 |
| Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+ a M Dudley, HH Wang, FZ Wu, SY Byrapa, B Raghothamachar, G Choi, ... Materials Science Forum 679, 269-272, 2011 | 24 | 2011 |
| Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals M Dudley, S Byrappa, H Wang, F Wu, Y Zhang, B Raghothamachar, ... MRS Online Proceedings Library Archive 1246, 2010 | 22 | 2010 |
| Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC HH Wang, SY Byrapa, F Wu, B Raghothamachar, M Dudley, EK Sanchez, ... Materials Science Forum 717, 327-330, 2012 | 21 | 2012 |
| The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC FZ Wu, M Dudley, HH Wang, SY Byrapa, S Sun, B Raghothamachar, ... Materials Science Forum 740, 217-220, 2013 | 19 | 2013 |
| Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+ a Dislocations in 4H-SiC F Wu, S Byrappa, H Wang, Y Chen, B Raghothamachar, M Dudley, ... MRS Online Proceedings Library Archive 1433, 2012 | 19 | 2012 |
| Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography HH Wang, FZ Wu, M Dudley, B Raghothamachar, GY Chung, J Zhang, ... Materials Science Forum 778, 328-331, 2014 | 15 | 2014 |
| Deflection of Threading Dislocations with Burgers Vector c/c+ a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults SY Byrapa, FZ Wu, HH Wang, B Raghothamachar, G Choi, S Sun, ... Materials Science Forum 717, 347-350, 2012 | 15 | 2012 |
| Study of V and Y shape Frank-type Stacking Faults Formation in 4H-SiC epilayer HH Wang, FZ Wu, SY Byrapa, Y Yang, B Raghothamachar, M Dudley, ... Materials Science Forum 778, 332-337, 2014 | 10 | 2014 |
| Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications M Dudley, H Wang, J Guo, Y Yang, B Raghothamachar, J Zhang, ... MRS Advances 1 (2), 91-102, 2016 | 9 | 2016 |
| Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC FZ Wu, HH Wang, Y Yang, J Guo, B Raghothamachar, M Dudley, ... Materials Science Forum 821, 85-89, 2015 | 9 | 2015 |
| Characterization of V-shaped defects in 4H-SiC homoepitaxial layers F Wu, H Wang, B Raghothamachar, M Dudley, G Chung, J Zhang, ... Journal of Electronic Materials 44 (5), 1293-1299, 2015 | 8 | 2015 |
| Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC H Wang, M Dudley, F Wu, Y Yang, B Raghothamachar, J Zhang, G Chung, ... Journal of Electronic Materials 44 (5), 1268-1274, 2015 | 8 | 2015 |
| Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC F Wu, H Wang, S Byrappa, B Raghothamachar, M Dudley, P Wu, X Xu, ... Journal of Electronic Materials 42 (5), 787-793, 2013 | 8 | 2013 |
| Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching H Wang, S Sun, M Dudley, S Byrappa, F Wu, B Raghothamachar, ... Journal of electronic materials 42 (5), 794-798, 2013 | 8 | 2013 |
| Synchrotron topography studies of the operation of double-ended Frank–Read partial dislocation sources in 4H-SiC H Wang, F Wu, S Byrappa, B Raghothamachar, M Dudley, P Wu, ... Journal of Crystal Growth 401, 423-430, 2014 | 7 | 2014 |
| 150 mm 4H-SiC substrate with low defect density YQ Gao, HY Zhang, YM Zong, HH Wang, JQ Guo, B Raghothamachar, ... Materials Science Forum 858, 41-44, 2016 | 5 | 2016 |
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)Verified email at stonybrook.edu
