Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET S Dash, AS Lenka, B Jena, GP Mishra International Journal of Numerical Modelling: Electronic Networks, Devices …, 2018 | 17 | 2018 |
An extensive investigation of work function modulated trapezoidal recessed channel MOSFET AS Lenka, S Mishra, S Mishra, U Bhanja, GP Mishra Superlattices and Microstructures 111, 878-888, 2017 | 12 | 2017 |
Effect of RRC on SOI MOSFET to improve the SCE S Mishra, AS Lenka, SS Mohanty, U Bhanja, GP Mishra 2017 Devices for Integrated Circuit (DevIC), 536-540, 2017 | 6 | 2017 |
Impact of non‐uniformly doped double‐gate junctionless transistor on the performance of 6T‐SRAM bitcell S Panigrahi, PK Sahu, AS Lenka Micro & Nano Letters 15 (2), 72-77, 2020 | 3 | 2020 |
DC Exploration of Oxide Trap Charge Effects on Electrically Doped Nano Ribbon FET AS Lenka, PK Sahu, S Bagchi 2021 Devices for Integrated Circuit (DevIC), 208-210, 2021 | 2 | 2021 |
Integration of high bandwidth material engineering in the development of a futuristic gate FET: A Comparison study T Sahoo, PK Sahu, AS Lenka 2023 IEEE IAS Global Conference on Emerging Technologies (GlobConET), 1-5, 2023 | 1 | 2023 |
Performance Optimization and Analysis of a Work function engineered 20nm Grooved channel Junctionless FinFET for Hydrogen Sensing T Sahoo, PK Sahu, AS Lenka 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-6, 2022 | | 2022 |
Trap Charges in High-k and Stacked Dielectric AS Lenka, PK Sahu High-k Materials in Multi-Gate FET Devices, 55-70, 2021 | | 2021 |