| p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth RM Park, MB Troffer, CM Rouleau, JM DePuydt, MA Haase Applied physics letters 57 (20), 2127-2129, 1990 | 817 | 1990 |
| Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source H Liu, AC Frenkel, JG Kim, RM Park Journal of applied physics 74 (10), 6124-6127, 1993 | 133 | 1993 |
| Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates JG Kim, AC Frenkel, H Liu, RM Park Applied physics letters 65 (1), 91-93, 1994 | 132 | 1994 |
| Blue-green diode lasers. GF Neumark, RM Park Physics Today 47 (6), 26-32, 1994 | 123 | 1994 |
| Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy RM Park, HA Mar, NM Salansky Journal of applied physics 58 (2), 1047-1049, 1985 | 84 | 1985 |
| GaAs substrate cleaning for epitaxy using a remotely generated atomic hydrogen beam CM Rouleau, RM Park Journal of applied physics 73 (9), 4610-4613, 1993 | 71 | 1993 |
| Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<104/cm2) InxGa1−xAs (x≤0.5) on GaAs V Krishnamoorthy, YW Lin, RM Park Journal of applied physics 72 (5), 1752-1757, 1992 | 68 | 1992 |
| Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers V Krishnamoorthy, YW Lin, L Calhoun, HL Liu, RM Park Applied physics letters 61 (22), 2680-2682, 1992 | 61 | 1992 |
| Low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy using a nitrogen free‐radical source RM Park Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992 | 51 | 1992 |
| Strain relief study concerning the InxGa1−xAs/GaAs (0.07<x<0.5) material system V Krishnamoorthy, P Ribas, RM Park Applied physics letters 58 (18), 2000-2002, 1991 | 50 | 1991 |
| Molecular beam epitaxy growth of ZnSe on (100) GaAs by compound source and separate source evaporation: A comparative study RM Park, HA Mar, NM Salansky Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 49 | 1985 |
| Molecular beam epitaxial growth of high quality ZnSe on (100) Si RM Park, HA Mar Applied physics letters 48 (8), 529-531, 1986 | 46 | 1986 |
| Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy P Ribas, V Krishnamoorthy, RM Park Applied physics letters 57 (10), 1040-1042, 1990 | 45 | 1990 |
| Determination of the onset of plastic deformation in ZnSe layers grown on (100) GaAs by molecular‐beam epitaxy J Kleiman, RM Park, SB Qadri Journal of applied physics 61 (5), 2067-2069, 1987 | 45 | 1987 |
| Homo‐and heteroepitaxial growth of high quality ZnSe by molecular beam epitaxy RM Park, HA Mar, NM Salansky Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 45 | 1985 |
| On epilayer tilt in ZnSe/Ge heterostructures prepared by molecular‐beam epitaxy J Kleiman, RM Park, HA Mar Journal of applied physics 64 (3), 1201-1205, 1988 | 40 | 1988 |
| Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide C Kothandaraman, GF Neumark, RM Park Applied physics letters 67 (22), 3307-3309, 1995 | 39 | 1995 |
| On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence H Liu, JG Kim, MH Ludwig, RM Park Applied physics letters 71 (3), 347-349, 1997 | 37 | 1997 |
| Surface structures and properties of ZnSe grown on (100) GaAs by molecular beam epitaxy RM Park, NM Salansky Applied physics letters 44 (2), 249-251, 1984 | 37 | 1984 |
| Observation of strain effects and evidence of gallium autodoping in molecular‐beam‐epitaxial ZnSe on (100) GaAs HA Mar, RM Park Journal of applied physics 60 (3), 1229-1232, 1986 | 31 | 1986 |
