| ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ... Journal of Applied Physics 105 (12), 2009 | 140 | 2009 |
| Photoluminescence study of p-type ZnO: Sb prepared by thermal oxidation of the Zn-Sb starting material E Przeździecka, E Kamińska, I Pasternak, A Piotrowska, J Kossut Physical Review B 76 (19), 193303, 2007 | 93 | 2007 |
| Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature E Przeździecka, W Paszkowicz, E Łusakowska, T Krajewski, G Łuka, ... Semiconductor Science and Technology 24 (10), 105014, 2009 | 76 | 2009 |
| Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2 E Kaminska, A Piotrowska, J Kossut, A Barcz, R Butkute, W Dobrowolski, ... Solid state communications 135 (1-2), 11-15, 2005 | 68 | 2005 |
| Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors E Przeździecka, E Kamińska, KP Korona, E Dynowska, W Dobrowolski, ... Semiconductor science and technology 22 (2), 10, 2006 | 64 | 2006 |
| Vertically stacked non-volatile memory devices–material considerations M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, ... Microelectronic Engineering 85 (12), 2434-2438, 2008 | 51 | 2008 |
| Structural Properties of MnTe, ZnTe, and ZnMnTe N Gonzalez Szwacki, E Przeździecka, E Dynowska, P Bogusławski, ... Acta Physica Polonica A 106 (2), 233-238, 2004 | 43 | 2004 |
| Abundant acceptor emission from nitrogen-doped ZnO films prepared by atomic layer deposition under oxygen-rich conditions E Guziewicz, E Przezdziecka, D Snigurenko, D Jarosz, BS Witkowski, ... ACS Applied Materials & Interfaces 9 (31), 26143-26150, 2017 | 40 | 2017 |
| Magneto-optical properties of the diluted magnetic semiconductor p-type ZnMnO E Przeździecka, E Kamińska, M Kiecana, M Sawicki, W Pacuski, J Kossut Solid state communications 139 (10), 541-544, 2006 | 37 | 2006 |
| XPS study of arsenic doped ZnO grown by Atomic Layer Deposition D Snigurenko, R Jakiela, E Guziewicz, E Przezdziecka, M Stachowicz, ... Journal of alloys and compounds 582, 594-597, 2014 | 36 | 2014 |
| p‐type conducting ZnO: fabrication and characterisation E Kaminska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ... physica status solidi (c) 2 (3), 1119-1124, 2005 | 33 | 2005 |
| ZnO by ALD-advantages of the material grown at low temperature E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, G Łuka, ... ACTA Physica Polonica a 116 (5), 814-817, 2009 | 32 | 2009 |
| Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material E Guziewicz, TA Krajewski, E Przezdziecka, KP Korona, N Czechowski, ... physica status solidi (b) 257 (2), 1900472, 2020 | 26 | 2020 |
| Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD—Experimental studies E Przezdziecka, E Guziewicz, D Jarosz, D Snigurenko, A Sulich, ... Journal of Applied Physics 127 (7), 2020 | 25 | 2020 |
| n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics M Guziewicz, R Schifano, E Przezdziecka, JZ Domagala, W Jung, ... Applied Physics Letters 107 (10), 2015 | 24 | 2015 |
| Characteristics of ZnO: As/GaN heterojunction diodes obtained by PA-MBE E Przezdziecka, A Wierzbicka, A Reszka, K Goscinski, A Droba, R Jakiela, ... Journal of Physics D: Applied Physics 46 (3), 035101, 2012 | 24 | 2012 |
| Structural properties of thin ZnO films deposited by ald under O-rich and Zn-rich growth conditions and their relationship with electrical parameters S Mishra, E Przezdziecka, W Wozniak, A Adhikari, R Jakiela, ... Materials 14 (14), 4048, 2021 | 23 | 2021 |
| Electro-optical characterization of ZnO/ZnMgO structure grown on p-type Si (1 1 1) by PA-MBE method MA Pietrzyk, E Zielony, M Stachowicz, A Reszka, E Płaczek-Popko, ... Journal of alloys and compounds 587, 724-728, 2014 | 23 | 2014 |
| Spectrum selective UV detectors from an p-ZnO: As/n-GaN diodes grown by Molecular Beam Epitaxy E Przeździecka, K Gościński, M Stachowicz, D Dobosz, E Zielony, ... Sensors and Actuators A: Physical 195, 27-31, 2013 | 22 | 2013 |
| Characterization of ZnO films grown at low temperature E Przeździecka, T Krajewski, A Wójcik-Głodowska, S Yatsunenko, ... Acta Physica Polonica A 114 (5), 1303-1310, 2008 | 22* | 2008 |
