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Kane O'Donnell
Kane O'Donnell
Royal Melbourne Hospital
Verified email at mh.org.au
Title
Cited by
Cited by
Year
Sulfur and Nitrogen Co‐Doped Graphene for Metal‐Free Catalytic Oxidation Reactions
X Duan, K O'Donnell, H Sun, Y Wang, S Wang
Small 11 (25), 3036-3044, 2015
6412015
Creating a Stable Oxide at the Surface of Black Phosphorus
MT Edmonds, A Tadich, A Carvalho, A Ziletti, KM O’Donnell, SP Koenig, ...
ACS applied materials & interfaces 7 (27), 14557-14562, 2015
3752015
Origins of Diamond Surface Noise Probed by Correlating Single-Spin Measurements with Surface Spectroscopy
S Sangtawesin, BL Dwyer, S Srinivasan, JJ Allred, LVH Rodgers, ...
Physical Review X 9 (3), 031052, 2019
2372019
Selective laser melting of Al-12Si alloy: Enhanced densification via powder drying
XP Li, KM O’Donnell, TB Sercombe
Additive Manufacturing 10, 10-14, 2016
1522016
Performance, morphology and photophysics of high open-circuit voltage, low band gap all-polymer solar cells
KD Deshmukh, T Qin, JK Gallaher, ACY Liu, E Gann, K O'Donnell, ...
Energy & Environmental Science, 2015
1432015
Nitrogen terminated diamond
A Stacey, KM O'Donnell, JP Chou, A Schenk, A Tadich, N Dontschuk, ...
Advanced Materials Interfaces 2 (10), 1500079, 2015
922015
Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films
J Hellerstedt, MT Edmonds, N Ramakrishnan, C Liu, B Weber, A Tadich, ...
Nano letters 16 (5), 3210-3214, 2016
902016
Work function and electron affinity of the fluorine-terminated (100) diamond surface
KJ Rietwyk, SL Wong, L Cao, KM O'Donnell, L Ley, ATS Wee, CI Pakes
Applied Physics Letters 102 (9), 091604, 2013
892013
Stability and Surface Reconstruction of Topological Insulator Bi2Se3 on Exposure to Atmosphere
MT Edmonds, JT Hellerstedt, A Tadich, A Schenk, KM O’Donnell, ...
The Journal of Physical Chemistry C 118 (35), 20413-20419, 2014
842014
Metal-free melem/gC 3 N 4 hybrid photocatalysts for water treatment
S Liu, H Sun, K O’Donnell, HM Ang, MO Tade, S Wang
Journal of Colloid and Interface Science 464, 10-17, 2016
832016
Mercury (II) selective sensors based on AlGaN/GaN transistors
M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ...
Analytica Chimica Acta 943, 1-7, 2016
822016
Highly chromium contaminant tolerant BaO infiltrated La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3− δ cathodes for solid oxide fuel cells
K Chen, N Ai, KM O'Donnell
Physical Chemistry Chemical Physics 17 (7), 4870-4874, 2015
762015
Diamond Surfaces with Air-Stable Negative Electron Affinity and Giant Electron Yield Enhancement
K O'Donnell, M Edmonds, J Ristein, A Tadich, L Thomsen, QH Wu, ...
Advanced Functional Materials 23 (45), 5608-5614, 2013
742013
Ab initio investigation of lithium on the diamond C (100) surface
KM O’Donnell, TL Martin, NA Fox, D Cherns
Physical Review B 82 (11), 115303, 2010
742010
Extremely high negative electron affinity of diamond via magnesium adsorption
KM O'Donnell, MT Edmonds, A Tadich, L Thomsen, A Stacey, A Schenk, ...
Physical Review B 92, 035303, 2015
552015
Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ
MT Edmonds, J Hellerstedt, KM O’Donnell, A Tadich, MS Fuhrer
ACS Applied Materials & Interfaces 8 (25), 16412-16418, 2016
512016
Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds
RG Ryan, A Stacey, KM O’Donnell, T Ohshima, BC Johnson, ...
ACS applied materials & interfaces 10 (15), 13143-13149, 2018
472018
Formation of a silicon terminated (100) diamond surface
A Schenk, A Tadich, M Sear, KM O'Donnell, L Ley, A Stacey, C Pakes
Applied Physics Letters 106 (19), 191603, 2015
462015
Triconstituent co-assembly synthesis of N, S-doped carbon–silica nanospheres with smooth and rough surfaces
H Tian, M Saunders, A Dodd, K O'Donnell, M Jaroniec, S Liu, J Liu
Journal of Materials Chemistry A 4 (10), 3721-3727, 2016
412016
Roll‐to‐Roll Sputter Coating of Aluminum Cathodes for Large‐Scale Fabrication of Organic Photovoltaic Devices
MJ Griffith, NA Cooling, B Vaughan, KM O'Donnell, MF Al‐Mudhaffer, ...
Energy Technology 3 (4), 428-436, 2015
392015
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