| Control of electrons’ spin eliminates hydrogen peroxide formation during water splitting W Mtangi, F Tassinari, K Vankayala, A Vargas Jentzsch, B Adelizzi, ... Journal of the American Chemical Society 139 (7), 2794-2798, 2017 | 255 | 2017 |
| Role of the electron spin polarization in water splitting W Mtangi, V Kiran, C Fontanesi, R Naaman The journal of physical chemistry letters 6 (24), 4916-4922, 2015 | 172 | 2015 |
| Analysis of temperature dependent I–V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant W Mtangi, FD Auret, C Nyamhere, PJJ Van Rensburg, M Diale, ... Physica B: Condensed Matter 404 (8-11), 1092-1096, 2009 | 105 | 2009 |
| Lithium and electrical properties of ZnO L Vines, EV Monakhov, R Schifano, W Mtangi, FD Auret, BG Svensson Journal of Applied Physics 107 (10), 2010 | 68 | 2010 |
| Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant MA Mayimele, M Diale, W Mtangi, FD Auret Materials Science in Semiconductor Processing 34, 359-364, 2015 | 44 | 2015 |
| The dependence of barrier height on temperature for Pd Schottky contacts on ZnO W Mtangi, FD Auret, C Nyamhere, PJJ van Rensburg, A Chawanda, ... Physica B: Condensed Matter 404 (22), 4402-4405, 2009 | 41 | 2009 |
| Chiro-Spintronics: Spin-Dependent Electrochemistry and Water Splitting Using Chiral Molecular Films CF Prakash Chandra Mondal, Wilbert Mtangi small methods, 2018 | 39* | 2018 |
| Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS W Mtangi, FD Auret, WE Meyer, MJ Legodi, PJ Janse van Rensburg, ... Journal of Applied Physics 111 (9), 2012 | 39 | 2012 |
| Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range W Mtangi, PJJ Van Rensburg, M Diale, FD Auret, C Nyamhere, JM Nel, ... Materials Science and Engineering: B 171 (1-3), 1-4, 2010 | 35 | 2010 |
| Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel Journal of alloys and compounds 492 (1-2), 649-655, 2010 | 33 | 2010 |
| Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements R Schifano, EV Monakhov, L Vines, BG Svensson, W Mtangi, FD Auret Journal of Applied Physics 106 (4), 2009 | 28 | 2009 |
| Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes A Chawanda, W Mtangi, FD Auret, J Nel, C Nyamhere, M Diale Physica B: Condensed Matter 407 (10), 1574-1577, 2012 | 22 | 2012 |
| Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy R Schifano, EV Monakhov, BG Svensson, W Mtangi, PJ van Rensburg, ... Physica B: Condensed Matter 404 (22), 4344-4348, 2009 | 19 | 2009 |
| Effects of high temperature annealing on single crystal ZnO and ZnO devices W Mtangi, FD Auret, M Diale, WE Meyer, A Chawanda, H De Meyer, ... Journal of Applied Physics 111 (8), 2012 | 18 | 2012 |
| A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques W Mtangi, FD Auret, PJ Janse van Rensburg, SMM Coelho, MJ Legodi, ... Journal of Applied Physics 110 (9), 2011 | 18 | 2011 |
| Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process A Chawanda, C Nyamhere, FD Auret, W Mtangi, TT Hlatshwayo, M Diale, ... Physica B: Condensed Matter 404 (22), 4482-4484, 2009 | 15 | 2009 |
| Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) A Chawanda, SMM Coelho, FD Auret, W Mtangi, C Nyamhere, JM Nel, ... Journal of alloys and compounds 513, 44-49, 2012 | 14 | 2012 |
| Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1) A Chawanda, KT Roro, FD Auret, W Mtangi, C Nyamhere, J Nel, L Leach Materials science in semiconductor processing 13 (5-6), 371-375, 2010 | 14 | 2010 |
| Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel physica status solidi c 7 (2), 248-251, 2010 | 12 | 2010 |
| A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals W Mtangi, M Schmidt, FD Auret, WE Meyer, PJ Janse van Rensburg, ... Journal of Applied Physics 113 (12), 2013 | 11 | 2013 |
