| Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zúñiga-Pérez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 137 | 2016 |
| Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si (111) K Hestroffer, C Leclere, C Bougerol, H Renevier, B Daudin Physical Review B 84 (24), 245302, 2011 | 135 | 2011 |
| N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 104 | 2017 |
| The structural properties of GaN/AlN core–shell nanocolumn heterostructures K Hestroffer, R Mata, D Camacho, C Leclere, G Tourbot, YM Niquet, ... Nanotechnology 21 (41), 415702, 2010 | 96 | 2010 |
| In situ study of self-assembled GaN nanowires nucleation on Si (111) by plasma-assisted molecular beam epitaxy K Hestroffer, C Leclere, V Cantelli, C Bougerol, H Renevier, B Daudin Applied Physics Letters 100 (21), 2012 | 66 | 2012 |
| Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells K Hestroffer, F Wu, H Li, C Lund, S Keller, JS Speck, UK Mishra Semiconductor Science and Technology 30 (10), 105015, 2015 | 65 | 2015 |
| 400%/W second harmonic conversion efficiency in 14 μm-diameter gallium phosphide-on-oxide resonators AD Logan, M Gould, ER Schmidgall, K Hestroffer, Z Lin, W Jin, ... Optics express 26 (26), 33687-33699, 2018 | 59 | 2018 |
| Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature R Mata, K Hestroffer, J Budagosky, A Cros, C Bougerol, H Renevier, ... Journal of Crystal Growth 334 (1), 177-180, 2011 | 55 | 2011 |
| Frequency control of single quantum emitters in integrated photonic circuits ER Schmidgall, S Chakravarthi, M Gould, IR Christen, K Hestroffer, ... Nano letters 18 (2), 1175-1179, 2018 | 48 | 2018 |
| Surface optical phonon modes in GaN nanowire arrays: Dependence on nanowire density and diameter R Mata, A Cros, K Hestroffer, B Daudin Physical Review B 85 (3), 035322, 2012 | 47 | 2012 |
| N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ... IEEE Electron Device Letters 37 (6), 713-716, 2016 | 45 | 2016 |
| N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ... IEEE Electron Device Letters 37 (1), 77-80, 2015 | 43 | 2015 |
| Inverse-designed photon extractors for optically addressable defect qubits S Chakravarthi, P Chao, C Pederson, S Molesky, A Ivanov, K Hestroffer, ... Optica 7 (12), 1805-1811, 2020 | 34 | 2020 |
| Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 32 | 2016 |
| High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ... 2016 Lester Eastman Conference (LEC), 42-45, 2016 | 28 | 2016 |
| N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates E Ahmadi, F Wu, H Li, SW Kaun, M Tahhan, K Hestroffer, S Keller, ... Semiconductor Science and Technology 30 (5), 055012, 2015 | 28 | 2015 |
| Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 39 (3), 409-412, 2018 | 24 | 2018 |
| W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width M Guidry, S Wienecke, B Romanczyk, X Zheng, H Li, E Ahmadi, ... 2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016 | 24 | 2016 |
| Common emitter current gain> 1 in III-N hot electron transistors with 7-nm GaN/InGaN base G Gupta, E Ahmadi, K Hestroffer, E Acuna, UK Mishra IEEE Electron device letters 36 (5), 439-441, 2015 | 22 | 2015 |
| Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes A Cros, R Mata, K Hestroffer, B Daudin Applied Physics Letters 102 (14), 2013 | 22 | 2013 |
Stacia KellerUniversity of California Santa BarbaraVerified email at ece.ucsb.edu
