| Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures RA Booth Jr, JA Mandelman, WR Tonti US Patent 7,352,034, 2008 | 211 | 2008 |
| Tunneling effect transistor with self-aligned gate RA Booth Jr, K Cheng, JA Mandelman US Patent 7,700,466, 2010 | 129 | 2010 |
| Bulk FinFET device RA Booth Jr, WP Hovis, JA Mandelman US Patent 7,517,764, 2009 | 82 | 2009 |
| Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip RA Booth Jr, K Cheng, BB Doris, GG Shahidi US Patent 8,513,723, 2013 | 74 | 2013 |
| Integrated circuit with finFETs and MIM fin capacitor RA Booth Jr, K Cheng, T Furukawa, C Pei US Patent 8,420,476, 2013 | 63 | 2013 |
| Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures RA Booth Jr, JA Mandelman, WR Tonti US Patent 7,879,660, 2011 | 58 | 2011 |
| Bulk FinFET device RA Booth Jr, WP Hovis, JA Mandelman US Patent 7,863,122, 2011 | 53 | 2011 |
| Metal gate compatible flash memory gate stack RA Booth Jr, D Kim, HS Yang, X Yu US Patent 7,834,387, 2010 | 53 | 2010 |
| A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing E Preisler, G Talor, D Howard, Z Yan, R Booth, J Zheng, S Chaudhry, ... 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 74-78, 2011 | 48 | 2011 |
| Embedded trench capacitor having a high-k node dielectric and a metallic inner electrode RA Booth Jr, MJ Brodsky, K Cheng, C Pei US Patent 7,671,394, 2010 | 48 | 2010 |
| FinFET with top body contact RA Booth Jr, K Cheng, JA Mandelman US Patent 7,550,773, 2009 | 41 | 2009 |
| High capacitance trench capacitor KKH Wong, R Divakaruni, RA Booth Jr US Patent 8,492,818, 2013 | 39 | 2013 |
| Electrical fuse having a thin fuselink RA Booth Jr, MJ Brodsky, K Cheng, C Pei US Patent 7,759,766, 2010 | 35 | 2010 |
| Shallow trench capacitor compatible with high-K/metal gate RA Booth Jr, MJ Brodsky, K Cheng, C Pei US Patent 7,875,919, 2011 | 34 | 2011 |
| Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures RA Booth Jr, JA Mandelman, WR Tonti US Patent 7,692,250, 2010 | 32 | 2010 |
| A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications C Pei, R Booth, H Ho, N Kusaba, X Li, MJ Brodsky, P Parries, H Shang, ... 2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008 | 32 | 2008 |
| Fin anti-fuse with reduced programming voltage RA Booth Jr, K Cheng, C Kothandaraman US Patent 8,030,736, 2011 | 28 | 2011 |
| Method of forming substrate contact for semiconductor on insulator (SOI) substrate G Wang, RA Booth Jr, K Cheng, J Ervin, C Pei, RM Todi US Patent 8,647,945, 2014 | 27 | 2014 |
| High capacitance trench capacitor KKH Wong, R Divakaruni, RA Booth Jr US Patent 8,664,075, 2014 | 26 | 2014 |
| Embedded DRAM for extremely thin semiconductor-on-insulator RA Booth Jr, K Cheng, J Ervin, A Khakifirooz, C Pei, RM Todi, G Wang US Patent 8,455,875, 2013 | 24 | 2013 |
Ravi TodiVerified email at globalfoundries.com
Ravi TodiVerified email at globalfoundries.com