Mmantsae Diale
Mmantsae Diale
Associate Professor of Physics, University of Pretoria
Verified email at up.ac.za - Homepage
TitleCited byYear
Analysis of temperature dependent I–V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
W Mtangi, FD Auret, C Nyamhere, PJJ Van Rensburg, M Diale, ...
Physica B: Condensed Matter 404 (8-11), 1092-1096, 2009
722009
Analysis of GaN cleaning procedures
M Diale, FD Auret, NG Van der Berg, RQ Odendaal, WD Roos
Applied Surface Science 246 (1-3), 279-289, 2005
642005
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ...
Materials Science in Semiconductor Processing 39, 112-118, 2015
322015
The dependence of barrier height on temperature for Pd Schottky contacts on ZnO
W Mtangi, FD Auret, C Nyamhere, PJJ van Rensburg, A Chawanda, ...
Physica B: Condensed Matter 404 (22), 4402-4405, 2009
302009
Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS
W Mtangi, FD Auret, WE Meyer, MJ Legodi, PJ Janse van Rensburg, ...
Journal of Applied Physics 111 (9), 094504, 2012
292012
Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes
MA Mayimele, JPJ van Rensburg, FD Auret, M Diale
Physica B: Condensed Matter 480, 58-62, 2016
272016
Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
W Mtangi, PJJ van Rensburg, M Diale, FD Auret, C Nyamhere, JM Nel, ...
Materials Science and Engineering: B 171 (1-3), 1-4, 2010
262010
Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0)
A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel
Journal of Alloys and Compounds 492 (1-2), 649-655, 2010
222010
Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes
A Chawanda, W Mtangi, FD Auret, J Nel, C Nyamhere, M Diale
Physica B: Condensed Matter 407 (10), 1574-1577, 2012
202012
Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes
M Diale, FD Auret
Physica B: Condensed Matter 404 (22), 4415-4418, 2009
202009
Laplace current deep level transient spectroscopy measurements of defect states in methylammonium lead bromide single crystals
JW Rosenberg, MJ Legodi, Y Rakita, D Cahen, M Diale
Journal of Applied Physics 122 (14), 145701, 2017
192017
Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
MA Mayimele, M Diale, W Mtangi, FD Auret
Materials Science in Semiconductor Processing 34, 359-364, 2015
162015
Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC
E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015
142015
Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
AT Paradzah, FD Auret, MJ Legodi, E Omotoso, M Diale
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015
142015
Effects of high temperature annealing on single crystal ZnO and ZnO devices
W Mtangi, FD Auret, M Diale, WE Meyer, A Chawanda, H De Meyer, ...
Journal of Applied Physics 111 (8), 084503, 2012
132012
Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process
A Chawanda, C Nyamhere, FD Auret, W Mtangi, TT Hlatshwayo, M Diale, ...
Physica B: Condensed Matter 404 (22), 4482-4484, 2009
132009
Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures
A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel
physica status solidi c 7 (2), 248-251, 2010
122010
Hall effect studies of donors and acceptors in different types of bulk ZnO modified by annealing and hydrogen implantation
GH Kassier, M Hayes, FD Auret, M Diale, BG Svensson
physica status solidi c 5 (2), 569-572, 2008
122008
Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes
AT Paradzah, E Omotoso, MJ Legodi, FD Auret, WE Meyer, M Diale
Journal of Electronic Materials 45 (8), 4177-4182, 2016
112016
The fine structure of electron irradiation induced EL2-like defects in n-GaAs
SM Tunhuma, FD Auret, MJ Legodi, M Diale
Journal of Applied Physics 119 (14), 145705, 2016
112016
The system can't perform the operation now. Try again later.
Articles 1–20