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André Fekecs
André Fekecs
AEPONYX inc., QC, Canada
Verified email at aeponyx.com
Title
Cited by
Cited by
Year
Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices
A Fekecs, M Bernier, D Morris, M Chicoine, F Schiettekatte, P Charette, ...
Optical Materials Express 1 (7), 1165-1177, 2011
372011
A new method for measuring time-resolved frequency chirp of high bit rate sources
C Laverdière, A Fekecs, M Têtu
IEEE Photonics Technology Letters 15 (3), 446-448, 2003
322003
An empirical model for high yield manufacturing of 10Gb/s negative chirp InP Mach-Zehnder modulators
I Betty, MG Boudreau, RA Griffin, A Feckes
Optical Fiber Communication Conference, OWE5, 2005
262005
1.55 µm transmission at 2.5 Gbit/s over 1102 km of NDSF using discrete and monolithically integrated InGaAsP/InP Mach-Zehnder modulator and DFB laser
DM Adams, C Rolland, A Fekecs, D McGhan, A Somani, S Bradshaw, ...
Electronics Letters 34 (8), 771-773, 1998
171998
> 100° C 10 Gbit/s directly modulated laser incorporating a novel semi-insulating buried heterostructure
JK White, C Blaauw, G Knight, SR Das, T Jones, N Kim, A Woodard, ...
2002 28TH European Conference on Optical Communication 2, 1-2, 2002
112002
Compact Asymmetric Strongly Gain-Coupled DFB Laser Array with Integrated BFM Array for Simultaneous 4-lambda 2.5 Gb/s 100 km WDM Transmission
J Hong, C Dreze, F Shepherd, A Fekecs, D Pollex, N Puetz, C Rogers, ...
Journal of lightwave technology 17 (8), 1436, 1999
91999
Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP: Fe Photoconductors
B Petrov, A Fekecs, C Sarra-Bournet, R Ares, D Morris
IEEE Transactions on Terahertz Science and Technology 6 (5), 747-753, 2016
82016
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
A Fekecs, M Chicoine, B Ilahi, AJ SpringThorpe, F Schiettekatte, D Morris, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015
72015
Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing
A Fekecs, M Chicoine, B Ilahi, F Schiettekatte, PG Charette, R Ares
Journal of Physics D: Applied Physics 46 (16), 165106, 2013
62013
20 Gbit/s directly modulated 1310 ridge laser
JK White, H Kim, C Blaauw, A Feceks
Optical Fiber Communication Conference, WDD71, 2001
62001
Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs: GaAs
M Martin, ER Brown, J Mangeney, A Fekecs, R Arès, D Morris
2012 37th International Conference on Infrared, Millimeter, and Terahertz …, 2012
42012
High performance directly modulated lasers: device physics
JK White, G Knight, S Das, RJ Finlay, T Jones, C Blaauw, A Fekecs, ...
Physics and Simulation of Optoelectronic Devices XI 4986, 222-236, 2003
42003
Microstructural evolution of a recrystallized Fe‐implanted InGaAsP/InP heterostructure
A Fekecs, A Korinek, M Chicoine, B Ilahi, F Schiettekatte, D Morris, R Arès
physica status solidi (a) 212 (9), 1888-1896, 2015
32015
Élaboration de photoconducteurs d’InGaAsP par implantation d'ions de fer pour des applications en imagerie proche-infrarouge et spectroscopie térahertz
A Fekecs
Université de Sherbrooke, Québec, Canada (http://hdl.handle.net/11143/6840), 2015
12015
Full-wafer thermal imaging in ultrahigh epitaxy tools
B Paquette, A Fekecs, B Gsib, H Pelletier, R Arès
Photonics North 2010 7750, 191-197, 2010
12010
Compact strongly gain-coupled DFB laser array with integrated BFMA arrays for simultaneous 4-lambda 2.5 Gb/s 100 km WDM transmission
J Hong, C Dreze, FR Shepherd, A Fekecs, D Pollex, N Puetz, C Rogers, ...
1998 International Conference on Applications of Photonic Technology III …, 1998
11998
Ion beam oxidation of vanadium thin films: structural characterization
A Fekecs, C Coia, L Fréchette, N Braidy
8th Symposium on Functional Coatings and Surface Engineering, Montréal, QC …, 2017
2017
Recent and forthcoming publications in pss
A Fekecs, A Korinek, M Chicoine, B Ilahi, F Schiettekatte, D Morris, R Arès
Phys. Status Solidi B 252 (8), 1693, 2015
2015
Photoconductive ultrafast low gap materials: pulsed THz emitters and detectors
B Petrov, A Fekecs, M Chicoine, F Schiettekatte, R Ares, D Morris
APS March Meeting Abstracts 2014, T44. 007, 2014
2014
Structural Fingerprints in Temperature-dependent Hall Measurements after Ion Implantation Amorphization and Recrystallization of InGaAsP/InP
A Fekecs, B Ilahi, M Chicoine, F Schiettekatte, D Morris, R Arès
The 25th International Conference on Amorphous and Nano-crystalline …, 2013
2013
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