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blair tuttle
blair tuttle
Penn State Erie; The Behrend College
Verified email at psu.edu - Homepage
Title
Cited by
Cited by
Year
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
G Liu, BR Tuttle, S Dhar
Applied Physics Reviews 2 (2), 2015
2912015
Mechanical stability of possible structures of PtN investigated using first-principles calculations
SKR Patil, SV Khare, BR Tuttle, JK Bording, S Kodambaka
Physical Review B 73 (10), 104118, 2006
2022006
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ...
Journal of Applied Physics 109 (3), 2011
1542011
Tunneling through ultrathin gate oxides from microscopic models
M Städele, BR Tuttle, K Hess
Journal of Applied Physics 89 (1), 348-363, 2001
1492001
Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon
B Tuttle, CG Van de Walle
Physical review B 59 (20), 12884, 1999
1401999
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations
NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ...
IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011
812011
Energetics and diffusion of hydrogen in SiO 2
B Tuttle
Physical Review B 61 (7), 4417, 2000
792000
Atomic state and characterization of nitrogen at the SiC/SiO2 interface
Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ...
Journal of Applied Physics 115 (3), 2014
772014
Microscopic theory of hydrogen in silicon devices
CG Van de Walle, BR Tuttle
IEEE Transactions on Electron Devices 47 (10), 1779-1786, 2000
732000
Diffusion of O vacancies near Si: Hf O 2 interfaces: An ab initio investigation
C Tang, B Tuttle, R Ramprasad
Physical Review B 76 (7), 073306, 2007
712007
Defect Interactions ofin: Implications for ELDRS and Latent Interface Trap Buildup
BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides
IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010
682010
Energetics of hydrogen in amorphous silicon: An ab initio study
B Tuttle, JB Adams
Physical Review B 57 (20), 12859, 1998
671998
Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime
K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli
Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998
661998
Theory of channel hot-carrier degradation in MOSFETs
K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ...
Physica B: Condensed Matter 272 (1-4), 527-531, 1999
641999
Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions
T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ...
Applied Physics Letters 96 (13), 2010
592010
Reactions of water molecules in silica-based network glasses
IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ...
Physical review letters 100 (10), 105503, 2008
592008
Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors
YS Puzyrev, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides
Applied Physics Letters 96 (5), 2010
582010
Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption
K Hess, B Tuttle, F Register, DK Ferry
Applied Physics Letters 75 (20), 3147-3149, 1999
551999
Large excitonic effects in group-IV sulfide monolayers
BR Tuttle, SM Alhassan, ST Pantelides
Physical Review B 92 (23), 235405, 2015
542015
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing
DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
492012
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