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Xiaoyang Ma
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CapCAM: A multilevel capacitive content addressable memory for high-accuracy and high-scalability search and compute applications
X Ma, H Zhong, N Xiu, Y Chen, G Yin, V Narayanan, Y Liu, K Ni, H Yang, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 30 (11 …, 2022
102022
Capacitive content-addressable memory: A highly reliable and scalable approach to energy-efficient parallel pattern matching applications
N Xiu, Y Chen, G Yin, X Ma, H Yang, S George, X Li
Proceedings of the 2021 on Great Lakes Symposium on VLSI, 479-484, 2021
82021
Exploiting FeFET switching stochasticity for low-power reconfigurable physical unclonable function
X Guo, X Ma, F Müller, R Olivo, J Wu, K Ni, T Kämpfe, Y Liu, H Yang, X Li
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC …, 2021
72021
A 2-transistor-2-capacitor ferroelectric edge compute-in-memory scheme with disturb-free inference and high endurance
X Ma, S Deng, J Wu, Z Zhao, D Lehninger, T Ali, K Seidel, S De, X He, ...
IEEE Electron Device Letters, 2023
32023
Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors
H Zhong, Z Zheng, L Jiao, Z Zhou, C Sun, X Ma, V Narayanan, H Yang, ...
arXiv preprint arXiv:2212.04973, 2022
12022
Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security
X Guo, X Ma, F Muller, K Ni, T Kampfe, Y Liu, V Narayanan, X Li
arXiv preprint arXiv:2208.14678, 2022
12022
First demonstration of reconfigurable and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation
X Li, X Guo, T Li, F Müller, S Abdulazhanov, X Ma, H Zhong, Y Liu, ...
2024
Memory device based on ferroelectric capacitor
X Li, X He, X Ma, J Wu, Z Xing, Y Liu, H Yang
US Patent 11,769,541, 2023
2023
Static random-access memory and electronic device
X Li, Y Chen, X Ma, M Zhou, Y Fu, Y Liu, H Yang
US Patent 11,475,927, 2022
2022
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