2D heterostructure for high‐order spatiotemporal information processing Y Zhai, P Xie, Z Feng, C Du, ST Han, Y Zhou Advanced Functional Materials 32 (7), 2108440, 2022 | 46 | 2022 |
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit Y Zhai, Z Feng, Y Zhou, ST Han Materials Horizons 8 (6), 1601-1617, 2021 | 35 | 2021 |
A perovskite memristor with large dynamic space for analog-encoded image recognition J Yang, F Zhang, HM Xiao, ZP Wang, P Xie, Z Feng, J Wang, J Mao, ... ACS nano 16 (12), 21324-21333, 2022 | 19 | 2022 |
High-performance perovskite memristor by integrating a tip-shape contact J Chen, Z Feng, M Luo, J Wang, Z Wang, Y Gong, S Huang, F Qian, ... Journal of Materials Chemistry C 9 (43), 15435-15444, 2021 | 17 | 2021 |
MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts RS Chen, G Ding, Z Feng, SR Zhang, WA Mo, ST Han, Y Zhou Advanced Functional Materials 32 (43), 2204288, 2022 | 16 | 2022 |
Three‐Terminal Artificial Olfactory Sensors based on Emerging Materials: Mechanism and Application G Duan, S Huang, Z Feng, P Xie, F Zhang, Y Zhou, ST Han Advanced Functional Materials 33 (10), 202209969, 2023 | 14 | 2023 |
Reconfigurable 2D-ferroelectric platform for neuromorphic computing Y Zhai, P Xie, J Hu, X Chen, Z Feng, Z Lv, G Ding, K Zhou, Y Zhou, ... Applied Physics Reviews 10 (1), 2023 | 11 | 2023 |
Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor WA Mo, G Ding, Z Nie, Z Feng, K Zhou, RS Chen, P Xie, G Shang, ST Han, ... Advanced Electronic Materials 9 (1), 2200733, 2023 | 9 | 2023 |
Organic memory devices and synaptic simulation based on indacenodithienothiophene (IDTT) copolymers with improved planarity Z Feng, M Comí, Y Ren, D Sredojević, S Attar, J Yang, Z Wang, RS Chen, ... Journal of Materials Chemistry C 10 (43), 16604-16613, 2022 | 5 | 2022 |
The floating body effect of a WSe 2 transistor with volatile memory performance ZP Wang, P Xie, JY Mao, R Wang, JQ Yang, Z Feng, Y Zhou, CC Kuo, ... Materials Horizons 9 (7), 1878-1887, 2022 | 4 | 2022 |
MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts (Adv. Funct. Mater. 43/2022). RS Chen, G Ding, Z Feng, SR Zhang, WA Mo, ST Han, Y Zhou Advanced Functional Materials 32 (43), 2022 | 1 | 2022 |
2D Heterostructure for High‐Order Spatiotemporal Information Processing (Adv. Funct. Mater. 7/2022) Y Zhai, P Xie, Z Feng, C Du, ST Han, Y Zhou Advanced Functional Materials 32 (7), 2022 | 1 | 2022 |
Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor (Adv. Electron. Mater. 1/2023). WA Mo, G Ding, Z Nie, Z Feng, K Zhou, RS Chen, P Xie, G Shang, ST Han, ... Advanced Electronic Materials 9 (1), 2023 | | 2023 |