Tight-binding calculations of image-charge effects in colloidal nanoscale platelets of CdSe R Benchamekh, NA Gippius, J Even, MO Nestoklon, JM Jancu, S Ithurria, ... Physical Review B 89 (3), 035307, 2014 | 190 | 2014 |
Spin and valley-orbit splittings in Si Ge∕ Si heterostructures MO Nestoklon, LE Golub, EL Ivchenko Physical Review B 73 (23), 235334, 2006 | 127 | 2006 |
Electric field effect on electron spin splitting in Si Ge∕ Si quantum wells MO Nestoklon, EL Ivchenko, JM Jancu, P Voisin Physical Review B 77 (15), 155328, 2008 | 107 | 2008 |
Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces SA Tarasenko, MV Durnev, MO Nestoklon, EL Ivchenko, JW Luo, ... Physical Review B 91 (8), 081302, 2015 | 80 | 2015 |
STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states JM Jancu, JC Girard, MO Nestoklon, A Lemaître, F Glas, ZZ Wang, ... Physical Review Letters 101 (19), 196801, 2008 | 71 | 2008 |
Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals MO Nestoklon, SV Goupalov, RI Dzhioev, OS Ken, VL Korenev, ... Phys. Rev. B 97, 235304, 2018 | 66 | 2018 |
Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point GM Minkov, AV Germanenko, OE Rut, AA Sherstobitov, MO Nestoklon, ... Physical Review B 93 (15), 155304, 2016 | 55 | 2016 |
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots C Robert, C Cornet, P Turban, TN Thanh, MO Nestoklon, J Even, ... Physical Review B 86 (20), 205316, 2012 | 51 | 2012 |
The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap E Kirstein, DR Yakovlev, MM Glazov, EA Zhukov, D Kudlacik, IV Kalitukha, ... Nature communications 13 (1), 3062, 2022 | 46 | 2022 |
Anomalous suppression of valley splittings in lead salt nanocrystals without inversion center AN Poddubny, MO Nestoklon, SV Goupalov Physical Review B 86 (3), 035324, 2012 | 38 | 2012 |
Tuning Optical Properties of Ge Nanocrystals by Si Shell MO Nestoklon, AN Poddubny, P Voisin, K Dohnalova J. Phys. Chem. C 120 (33), 18901–18908, 2016 | 33 | 2016 |
Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet AA Toropov, EA Evropeitsev, MO Nestoklon, DS Smirnov, TV Shubina, ... Nano Letters 20 (1), 158-165, 2019 | 29 | 2019 |
Carrier injection and light emission in visible and UV nitride LEDs by modeling SY Karpov, KA Bulashevich, IA Zhmakin, VO Nestoklon, VF Mymrin, ... physica status solidi (b) 241 (12), 2668-2671, 2004 | 27 | 2004 |
Virtual crystal description of III–V semiconductor alloys in the tight binding approach MO Nestoklon, R Benchamekh, P Voisin Journal of Physics: Condensed Matter 28 (30), 305801, 2016 | 25 | 2016 |
Spin splitting of electron states in (110) quantum wells: Symmetry analysis and k· p theory versus microscopic calculations MO Nestoklon, SA Tarasenko, JM Jancu, P Voisin Physical Review B 85 (20), 205307, 2012 | 22 | 2012 |
Weak localization of two-dimensional Dirac fermions beyond the diffusion regime MO Nestoklon, NS Averkiev, SA Tarasenko Solid state communications 151 (21), 1550-1553, 2011 | 21 | 2011 |
Tensile-strained GaAs quantum wells and quantum dots in a Ga As x Sb 1− x matrix AA Toropov, OG Lyublinskaya, BY Meltser, VA Solov’ev, AA Sitnikova, ... Physical Review B 70 (20), 205314, 2004 | 21 | 2004 |
Band structure of silicene in the tight binding approximation AV Gert, MO Nestoklon, IN Yassievich Journal of Experimental and Theoretical Physics 121, 115-121, 2015 | 20 | 2015 |
Optical transitions on a type II semiconductor interface in the empirical tight-binding theory EL Ivchenko, MO Nestoklon Journal of Experimental and Theoretical Physics 94, 644-653, 2002 | 19 | 2002 |
Lateral optical anisotropy of type-II interfaces in the tight-binding approach EL Ivchenko, MO Nestoklon Physical review B 70 (23), 235332, 2004 | 18 | 2004 |