| Reproducible switching effect in thin oxide films for memory applications A Beck, JG Bednorz, C Gerber, C Rossel, D Widmer Applied Physics Letters 77 (1), 139-141, 2000 | 1581 | 2000 |
| Partially gapped Fermi surface in the heavy-electron superconductor MB Maple, JW Chen, Y Dalichaouch, T Kohara, C Rossel, MS Torikachvili, ... Physical review letters 56 (2), 185, 1986 | 779 | 1986 |
| A strong electro-optically active lead-free ferroelectric integrated on silicon S Abel, T Stöferle, C Marchiori, C Rossel, MD Rossell, R Erni, D Caimi, ... Nature communications 4 (1), 1671, 2013 | 355 | 2013 |
| Electrical current distribution across a metal–insulator–metal structure during bistable switching C Rossel, GI Meijer, D Bremaud, D Widmer Journal of Applied Physics 90 (6), 2892-2898, 2001 | 354 | 2001 |
| Low-temperature properties of rare-earth and actinide iron phosphide compounds M Fe 4 P 12 (M= La, Pr, Nd, and Th) MS Torikachvili, JW Chen, Y Dalichaouch, RP Guertin, MW McElfresh, ... Physical Review B 36 (16), 8660, 1987 | 231 | 1987 |
| Strong electronic correlations in a new class of Yb-based compounds: YbX Cu 4 (X= Ag, Au, Pd) C Rossel, KN Yang, MB Maple, Z Fisk, E Zirngiebl, JD Thompson Physical Review B 35 (4), 1914, 1987 | 222 | 1987 |
| Observation of magnetic-field-induced superconductivity HW Meul, C Rossel, M Decroux, Ø Fischer, G Remenyi, A Briggs Physical review letters 53 (5), 497, 1984 | 193 | 1984 |
| Active microlevers as miniature torque magnetometers C Rossel, P Bauer, D Zech, J Hofer, M Willemin, H Keller Journal of applied physics 79 (11), 8166-8173, 1996 | 178 | 1996 |
| Muon-spin-rotation measurements of the London penetration depths in B Pümpin, H Keller, W Kündig, W Odermatt, IM Savić, JW Schneider, ... Physical Review B 42 (13), 8019, 1990 | 161 | 1990 |
| Memory effects in a superconducting y-ba-cu-o single crystal: A similarity to spin-glasses C Rossel, Y Maeno, I Morgenstern Physical review letters 62 (6), 681, 1989 | 139 | 1989 |
| Strong shift of the irreversibility line in high-T c superconductors upon vortex shaking with an oscillating magnetic field M Willemin, C Rossel, J Hofer, H Keller, A Erb, E Walker Physical Review B 58 (10), R5940, 1998 | 131 | 1998 |
| First-Order Vortex-Lattice Melting Transition in YBa 2 Cu 3 O 7− δ near the Critical Temperature Detected by Magnetic Torque M Willemin, A Schilling, H Keller, C Rossel, J Hofer, U Welp, WK Kwok, ... Physical review letters 81 (19), 4236, 1998 | 123 | 1998 |
| Inversion mode n-channel GaAs field effect transistor with high-k/metal gate JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ... Applied Physics Letters 92 (15), 2008 | 115 | 2008 |
| Microelectronic device for storing information with switchable ohmic resistance A Beck, C Bednorz, C Gerber, CP Rossel US Patent 6,815,744, 2004 | 115 | 2004 |
| Resistance switching at the nanometre scale in amorphous carbon A Sebastian, A Pauza, C Rossel, RM Shelby, AF Rodríguez, H Pozidis, ... New Journal of Physics 13 (1), 013020, 2011 | 111 | 2011 |
| Field-effect transistors with SrHfO3 as gate oxide C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ... Applied physics letters 89 (5), 2006 | 111 | 2006 |
| Oxygenated amorphous carbon for resistive memory applications Santini, Sebastian, Marchiori, Jonnalagadda, Dellmann, Koelmans, Rossell ... Nature Communications, 2015 | 107 | 2015 |
| Towards large size substrates for III-V co-integration made by direct wafer bonding on Si N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ... APL materials 2 (8), 2014 | 91 | 2014 |
| SrHfO3 as gate dielectric for future CMOS technology C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ... Microelectronic engineering 84 (9-10), 1869-1873, 2007 | 89 | 2007 |
| Doping dependence of superconducting parameters in HgBa2CuO4+ δ single crystals J Hofer, J Karpinski, M Willemin, GI Meijer, EM Kopnin, R Molinski, ... Physica C: Superconductivity 297 (1-2), 103-110, 1998 | 89 | 1998 |
Jean FompeyrineIBM Research GmbHVerified email at zurich.ibm.com
