| Observation of the radiative decay of the 229Th nuclear clock isomer S Kraemer, J Moens, M Athanasakis-Kaklamanakis, S Bara, K Beeks, ... Nature 617 (7962), 706-710, 2023 | 48 | 2023 |
| Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range VE Gora, FD Auret, HT Danga, SM Tunhuma, C Nyamhere, E Igumbor, ... Materials Science and Engineering: B 247, 114370, 2019 | 34 | 2019 |
| Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide VE Gora, A Chawanda, C Nyamhere, FD Auret, F Mazunga, T Jaure, ... Physica B: Condensed Matter 535, 333-337, 2018 | 31 | 2018 |
| The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes SM Tunhuma, FD Auret, MJ Legodi, M Diale Physica B: Condensed Matter 480, 201-205, 2016 | 24 | 2016 |
| Defects in swift heavy ion irradiated n-4H-SiC SM Tunhuma, M Diale, JM Nel, MJ Madito, TT Hlatshwayo, FD Auret Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2019 | 17 | 2019 |
| The fine structure of electron irradiation induced EL2-like defects in n-GaAs SM Tunhuma, FD Auret, MJ Legodi, M Diale Journal of Applied Physics 119 (14), 2016 | 16 | 2016 |
| Magnesium-vacancy optical centers in diamond E Corte, G Andrini, E Nieto Hernández, V Pugliese, Â Costa, G Magchiels, ... Acs Photonics 10 (1), 101-110, 2022 | 12 | 2022 |
| Defects induced by solid state reactions at the tungsten-silicon carbide interface SM Tunhuma, M Diale, MJ Legodi, JM Nel, TT Thabete, FD Auret Journal of Applied Physics 123 (16), 2018 | 12 | 2018 |
| The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes E Omotoso, WE Meyer, PJJ van Rensburg, E Igumbor, SM Tunhuma, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 11 | 2017 |
| The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC E Omotoso, FD Auret, E Igumbor, SM Tunhuma, HT Danga, PNM Ngoepe, ... Applied Physics A 124, 1-7, 2018 | 10 | 2018 |
| Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs SM Tunhuma, FD Auret, JM Nel, E Omotoso, HT Danga, E Igumbor, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 9 | 2017 |
| Electrically active defects in p-type silicon after alpha-particle irradiation HT Danga, FD Auret, SM Tunhuma, E Omotoso, E Igumbor, WE Meyer Physica B: Condensed Matter 535, 99-101, 2018 | 6 | 2018 |
| Rare earth interstitial-complexes in Ge: Hybrid density functional studies E Igumbor, E Omotoso, HT Danga, SM Tunhuma, WE Meyer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 4 | 2017 |
| Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC SM Tunhuma, FD Auret, MJ Legodi, J Nel, M Diale Materials Science in Semiconductor Processing 81, 122-126, 2018 | 3 | 2018 |
| Rare earth substitutional impurities in germanium: A hybrid density functional theory study E Igumbor, E Omotoso, SM Tunhuma, HT Danga, WE Meyer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 3 | 2017 |
| Thermal stability of defects introduced by electron beam deposition in p-type silicon HT Danga, FD Auret, SM Tunhuma, E Omotoso, E Igumbor, WE Meyer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 3 | 2017 |
| Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon HT Danga, FD Auret, SM Tunhuma, E Omotoso, E Igumbor, WE Meyer AIP Conference Proceedings 2109 (1), 2019 | 2 | 2019 |
| Women in physics in Zimbabwe HT Danga, SM Tunhuma, VE Gora, JF Jena, A Chawanda AIP Conference Proceedings 2109 (1), 2019 | 2 | 2019 |
| In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide SM Tunhuma, FD Auret, HT Danga, JM Nel, MM Diale Journal of Electronic Materials 48, 3849-3853, 2019 | 1 | 2019 |
| Electrical characterisation of 5.4 MeV alpha-particle irradiated; low doped, n-type gallium arsenide SM Tunhuma, FD Auret, MJ Legodi, M Diale South African Institute of Physics Port Elizabeth, 2015 | 1 | 2015 |
Ezekiel OmotosoUniversity of Pretoria and Obafemi Awolowo UniversityVerified email at tuks.co.za
