| 2-D theoretical model for current-voltage characteristics in AlGaN/GaN HEMT’s M Charfeddine, H Belmabrouk, MA Zaidi, H Maaref Journal of Modern Physics 3 (8), 881-886, 2012 | 87 | 2012 |
| Electrical characterization of (Ni/Au)/Al0. 25Ga0. 75N/GaN/SiC Schottky barrier diode S Saadaoui, M Mongi Ben Salem, M Gassoumi, H Maaref, C Gaquière Journal of Applied Physics 110 (1), 2011 | 85 | 2011 |
| Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS M Gassoumi, B Grimbert, C Gaquière, H Maaref Semiconductors 46, 382-385, 2012 | 49 | 2012 |
| Double Jonscher response and contribution of multiple mechanisms in electrical conductivity processes of Fe-PrCaMnO ceramic Y Moualhi, MM Nofal, R M'nassri, H Rahmouni, A Selmi, M Gassoumi, ... Ceramics International 46 (2), 1601-1608, 2020 | 42 | 2020 |
| Electrical characterization of traps in AlGaN/GaN FAT-HEMT’s on silicon substrate by CV and DLTS measurements M Charfeddine, M Gassoumi, H Mosbahi, C Gaquiére, MA Zaidi, H Maaref Journal of Modern Physics 2011, 2011 | 39 | 2011 |
| Transport properties of La0.9Sr0.1MnO3 manganite W Hizi, H Rahmouni, M Gassoumi, K Khirouni, S Dhahri The European Physical Journal Plus 135, 1-13, 2020 | 34 | 2020 |
| Summerfield scaling model and conduction processes defining the transport properties of silver substituted half doped (La–Ca) MnO3 ceramic Y Moualhi, H Rahmouni, M Gassoumi, K Khirouni Ceramics International 46 (15), 24710-24717, 2020 | 31 | 2020 |
| Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors I Saidi, M Gassoumi, H Maaref, H Mejri, C Gaquière Journal of Applied Physics 106 (5), 2009 | 31 | 2009 |
| Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy M Gassoumi, JM Bluet, F Chekir, I Dermoul, H Maaref, G Guillot, A Minko, ... Materials Science and Engineering: C 26 (2-3), 383-386, 2006 | 31 | 2006 |
| Magnetic properties and impedance spectroscopic analysis in Pr0.7Ca0.3Mn0.95Fe0.05O3 perovskite ceramic Y Moualhi, R M’nassri, MM Nofal, H Rahmouni, A Selmi, M Gassoumi, ... Journal of Materials Science: Materials in Electronics 31, 21046-21058, 2020 | 27 | 2020 |
| Anomaly and defects characterization by IV and current deep level transient spectroscopy of Al0. 25Ga0. 75N/GaN/SiC high electron-mobility transistors S Saadaoui, MM Ben Salem, M Gassoumi, H Maaref, C Gaquière Journal of Applied Physics 111 (7), 2012 | 27 | 2012 |
| The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates M Gassoumi, MMB Salem, S Saadaoui, B Grimbert, J Fontaine, H Maaref Microelectronic engineering 88 (4), 370-372, 2011 | 27 | 2011 |
| Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy M Gassoumi, JM Bluet, G Guillot, C Gaquière, H Maaref Materials Science and Engineering: C 28 (5-6), 787-790, 2008 | 27 | 2008 |
| Characterization, antimicrobial and anticancer properties of palladium nanoparticles biosynthesized optimally using Saudi propolis MS Al-Fakeh, SOM Osman, M Gassoumi, M Rabhi, M Omer Nanomaterials 11 (10), 2666, 2021 | 24 | 2021 |
| Influence of Fe doping on physical properties of charge ordered praseodymium–calcium–manganite material Y Moualhi, R M’nassri, MM Nofal, H Rahmouni, A Selmi, M Gassoumi, ... The European Physical Journal Plus 135, 1-23, 2020 | 24 | 2020 |
| Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse M Gassoumi, O Fathallah, C Gaquière, H Maaref Physica B: Condensed Matter 405 (9), 2337-2339, 2010 | 23 | 2010 |
| Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse M Gassoumi, O Fathallah, C Gaquière, H Maaref Physica B: Condensed Matter 405 (9), 2337-2339, 2010 | 23 | 2010 |
| DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application M Gassoumi, A Helali, H Maaref, M Gassoumi Results in Physics 12, 302-306, 2019 | 22 | 2019 |
| Leakage current, capacitance hysteresis and deep traps in Al0. 25Ga0. 75N/GaN/SiC high-electron-mobility transistors S Saadaoui, MMB Salem, O Fathallah, M Gassoumi, C Gaquière, ... Physica B: Condensed Matter 412, 126-129, 2013 | 22 | 2013 |
| Leakage current, capacitance hysteresis and deep traps in Al0. 25Ga0. 75N/GaN/SiC high-electron-mobility transistors S Saadaoui, MMB Salem, O Fathallah, M Gassoumi, C Gaquière, ... Physica B: Condensed Matter 412, 126-129, 2013 | 22 | 2013 |
