| Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223, 2015 | 44 | 2015 |
| Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, CK Sarkar Solid-State Electronics 91, 44-52, 2014 | 40 | 2014 |
| Recent advancement in TENG polymer structures and energy efficient charge control circuits D Godwinraj, SC George Advanced Industrial and Engineering Polymer Research 4 (1), 1-8, 2021 | 26 | 2021 |
| Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices S Baskaran, A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, ... Superlattices and Microstructures 64, 470-482, 2013 | 25 | 2013 |
| Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices D Godwinraj, H Pardeshi, SK Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 54, 188-203, 2013 | 18 | 2013 |
| Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications D Godfrey, D Nirmal, L Arivazhagan, B Roy, YL Chen, TH Yu, WK Yeh, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 14 | 2020 |
| Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, Y Chen, ... Microelectronics Journal 118, 105293, 2021 | 9 | 2021 |
| Enhancement of DC and breakdown performance on single to multi-step gate FP using GaN-HEMT for high power applications D Godfrey, D Nirmal, D Godwinraj, L Arivazhagan, N MohanKumar, ... Silicon 13, 1177-1183, 2021 | 3 | 2021 |
| III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications D Godwinraj Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications …, 2021 | 1 | 2021 |
| Strain-induced ionic polarization dependent AlGaN/GaN high electron mobility transistor D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, WK Yeh 2020 4th International Conference on Trends in Electronics and Informatics …, 2020 | 1 | 2020 |
| The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs YL Chen, WK Yeh, HT Hsu, KH Chen, DH Lien, WC Lin, TH Yu, YS Chiu, ... Journal of Electronic Materials 52 (2), 1391-1399, 2023 | | 2023 |
| Current collapse degradation on GaN high electron mobility transistor using a new derived surface trap modelling D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, N MohanKumar, ... Journal of Semiconductors 41, -1--8, 2020 | | 2020 |
| Performance Evaluation of Single Layer and Multi Layer Graphene Sheet Transistors B Babu, D Godwinraj Emerging Technologies for Sustainability, 403-410, 2020 | | 2020 |
| Advanced Industrial and Engineering Polymer Research D Godwinraj, SC George | | |
