J Bluet
J Bluet
Verified email at insa-lyon.fr
Cited by
Cited by
Application of quantum dots for living cell imaging
J Botsoa, V Lysenko, A Geloen, O Marty, JM Bluet, G Guillot
Applied Physics Letters 92 (17), 173902, 2008
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
W Chikhaoui, JM Bluet, MA Poisson, N Sarazin, C Dua, C Bru-Chevallier
Applied Physics Letters 96 (7), 072107, 2010
Activation of aluminum implanted at high doses in 4H–SiC
JM Bluet, J Pernot, J Camassel, S Contreras, JL Robert, JF Michaud, ...
Journal of Applied Physics 88 (4), 1971-1977, 2000
Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity
N Sghaier, JM Bluet, A Souifi, G Guillot, E Morvan, C Brylinski
IEEE Transactions on Electron Devices 50 (2), 297-302, 2003
Influence of the interfacial chemical environment on the luminescence of 3 C SiC nanoparticles
Y Zakharko, J Botsoa, S Alekseev, V Lysenko, JM Bluet, O Marty, ...
Journal of Applied Physics 107 (1), 013503, 2010
Ni–Al ohmic contact to p-type 4H-SiC
H Vang, M Lazar, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ...
Superlattices and microstructures 40 (4-6), 626-631, 2006
The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface
W Knap, H Alause, JM Bluet, J Camassel, J Young, MA Khan, Q Chen, ...
Solid state communications 99 (3), 195-199, 1996
Strain relaxation at the 3 C− S i C/S i interface: Raman scattering experiments
LA Falkovsky, JM Bluet, J Camassel
Physical Review B 57 (18), 11283, 1998
Photoluminescence of 6H–SiC nanostructures fabricated by electrochemical etching
J Botsoa, JM Bluet, V Lysenko, O Marty, D Barbier, G Guillot
Journal of Applied Physics 102 (8), 083526, 2007
Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions
PJ Newby, B Canut, JM Bluet, S Gomès, M Isaiev, R Burbelo, ...
Journal of Applied Physics 114 (1), 014903, 2013
PL characterization of GaN scintillator for radioluminescence-based dosimetry
P Pittet, GN Lu, JM Galvan, JM Bluet, I Anas, JY Giraud, J Balosso
Optical Materials 31 (10), 1421-1424, 2009
Strain dependence of indirect band gap for strained silicon on insulator wafers
J Munguía, G Bremond, JM Bluet, JM Hartmann, M Mermoux
Applied Physics Letters 93 (10), 102101, 2008
Intense visible emission from ZnO/PAAX (X= H or Na) nanocomposite synthesized via a simple and scalable sol-gel method
Y Zhu, A Apostoluk, P Gautier, A Valette, L Omar, T Cornier, JM Bluet, ...
Scientific reports 6 (1), 1-11, 2016
Luminescence mechanisms in 6H-SiC nanocrystals
J Botsoa, JM Bluet, V Lysenko, L Sfaxi, Y Zakharko, O Marty, G Guillot
Physical Review B 80 (15), 155317, 2009
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
N Sghaier, M Trabelsi, N Yacoubi, JM Bluet, A Souifi, G Guillot, ...
Microelectronics Journal 37 (4), 363-370, 2006
Strain-fluctuation effect on Raman spectra
LA Falkovsky, JM Bluet, J Camassel
Physical Review B 55 (22), R14697, 1997
Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy
M Gassoumi, JM Bluet, F Chekir, I Dermoul, H Maaref, G Guillot, A Minko, ...
Materials Science and Engineering: C 26 (2-3), 383-386, 2006
A review of in situ methodologies for studying elastohydrodynamic lubrication
SMB Albahrani, D Philippon, P Vergne, JM Bluet
Proceedings of the Institution of Mechanical Engineers, Part J: Journal of …, 2016
Characterization of the thermal conductivity of insulating thin films by scanning thermal microscopy
S Gomès, P Newby, B Canut, K Termentzidis, O Marty, L Frechette, ...
Microelectronics journal 44 (11), 1029-1034, 2013
Tunable mid IR plasmon in GZO nanocrystals
MK Hamza, JM Bluet, K Masenelli-Varlot, B Canut, O Boisron, P Melinon, ...
Nanoscale 7 (28), 12030-12037, 2015
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