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Ezekiel Omotoso
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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ...
Materials Science in Semiconductor Processing 39, 112-118, 2015
652015
XPS and some surface characterizations of electrodeposited MgO nanostructure
BA Taleatu, E Omotoso, C Lal, WO Makinde, KT Ogundele, E Ajenifuja, ...
Surface and Interface Analysis 46 (6), 372-377, 2014
512014
Optimization of graphene oxide through various Hummers' methods and comparative reduction using green approach
AA Olorunkosebi, MA Eleruja, AV Adedeji, B Olofinjana, O Fasakin, ...
Diamond and Related Materials 117, 108456, 2021
472021
Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide
VE Gora, A Chawanda, C Nyamhere, FD Auret, F Mazunga, T Jaure, ...
Physica B: Condensed Matter 535, 333-337, 2018
312018
Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
AT Paradzah, FD Auret, MJ Legodi, E Omotoso, M Diale
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015
312015
Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC
E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015
262015
Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation
E Omotoso, WE Meyer, FD Auret, AT Paradzah, MJ Legodi
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016
242016
Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes
AT Paradzah, E Omotoso, MJ Legodi, FD Auret, WE Meyer, M Diale
Journal of Electronic Materials 45, 4177-4182, 2016
222016
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
E Omotoso, WE Meyer, SMM Coelho, M Diale, PNM Ngoepe, FD Auret
Materials Science in Semiconductor Processing 51, 20-24, 2016
202016
Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences
E Omotoso, WE Meyer, FD Auret, M Diale, PNM Ngoepe
Physica B: Condensed Matter 480, 196-200, 2016
172016
Preparation and Surface Characterization of Nanostructured MoO3/CoxOy and V2O5/CoxOy Interfacial Layers as Transparent Oxide Structures for …
SA Adewinbi, BA Taleatu, RA Busari, OE Adewumi, E Omotoso, ...
Journal of Electronic Materials 49, 3837-3848, 2020
152020
Effective pseudocapacitive performance of binder free transparent α-V2O5 thin film electrode: Electrochemical and some surface probing
SA Adewinbi, RA Busari, LO Animasahun, E Omotoso, BA Taleatu
Physica B: Condensed Matter 621, 413260, 2021
142021
Synthesis and surface characterization of electrodeposited quaternary chalcogenide thin film as transparent contact electrode
RA Busari, BA Taleatu, SA Adewinbi, OE Adewumi, E Omotoso, ...
Bulletin of Materials Science 43, 1-9, 2020
132020
Microstructural and optical properties of nanocrystalline MgS thin film as wide band gap barrier material
BA Taleatu, E Omotoso, EAA Arbab, RA Lasisi, WO Makinde, GT Mola
Applied Physics A 118, 539-545, 2015
122015
Surface microstructure, optical and electrical properties of spray pyrolyzed PbS and Zn-PbS thin films for optoelectronic applications
EA Abiodun, E Ajenifuja, AT Bidini, DO Enoch, E Omotoso, O Adeyemi, ...
Materials Science-Poland 35 (3), 576-582, 2017
112017
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
E Omotoso, WE Meyer, PJJ van Rensburg, E Igumbor, SM Tunhuma, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017
112017
Synthesis and microstructural studies of annealed Cu2O/CuxS bilayer as transparent electrode material for photovoltaic and energy storage devices
BA Taleatu, EAA Arbab, E Omotoso, GT Mola
Journal of Microscopy 256 (1), 61-71, 2014
112014
The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC
E Omotoso, FD Auret, E Igumbor, SM Tunhuma, HT Danga, PNM Ngoepe, ...
Applied Physics A 124, 1-7, 2018
102018
Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons
E Omotoso, AT Paradzah, PJJ van Rensburg, MJ Legodi, FD Auret, ...
Surface and Coatings Technology 355, 2-6, 2018
92018
Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs
SM Tunhuma, FD Auret, JM Nel, E Omotoso, HT Danga, E Igumbor, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017
92017
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