| Tin induced a-Si crystallization in thin films of Si-Sn alloys V Neimash, V Poroshin, P Shepeliavyi, V Yukhymchuk, V Melnyk, ... Journal of Applied Physics 114 (21), 2013 | 48 | 2013 |
| Self-sustained cyclic tin induced crystallization of amorphous silicon VB Neimash, AO Goushcha, PY Shepeliavyi, VO Yukhymchuk, VA Danko, ... Journal of Materials Research 30 (20), 3116-3124, 2015 | 24 | 2015 |
| Mechanism of tin-induced crystallization in amorphous silicon VB Neimash, AO Goushcha, PE Shepeliavyi, VO Yukhymchuk, ... Ukrainian journal of physics 59 (12), 1168-1168, 2014 | 24 | 2014 |
| Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices VP Makhniy, VE Baranjuk, NV Demich, VV Melnyk, IV Malimon, ... Selected Papers from the International Conference on Optoelectronic …, 2001 | 24 | 2001 |
| Nanocrystals Growth Control during Laser Annealing of Sn:(α-Si) Composites V Neimash, P Shepelyavyi, G Dovbeshko, AO Goushcha, M Isaiev, ... Journal of Nanomaterials 2016, 2016 | 19 | 2016 |
| Influence of laser light on the formation and properties of silicon nanocrystals in a-Si/Sn layered structures VB Neimash, AS Nikolenko, VV Strelchuk, PY Shepelyavyi, PM Litvinchuk, ... Ukrainian journal of physics 64 (6), 522-522, 2019 | 5 | 2019 |
| Semiconductor UV-radiation detectors for biology and medicine VP Makhniy, VV Melnyk, MM Slyotov, OV Stets Seventh International Conference on Correlation Optics 6254, 493-495, 2006 | 3 | 2006 |
| Prospects of using the wide bandgap II-VI compounds of in short-wave sensors VP Makhny, LI Arhilyuk, VI Gryvul, VV Melnyk, MM Slyotov, ... Сенсорна електроніка і мікросистемні технології 3 (3), 30-34, 2006 | 3 | 2006 |
| Tin doping effect on crystallization of amorphous silicon, obtained by vapor deposition in vacuum VB Neimash, VM Poroshin, PY Shepeliavyi, VO Yukhymchuk, VV Melnyk, ... Semiconductor physics, quantum electronics & optoelectronics, 331-335, 2013 | 2 | 2013 |
| Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon. VB Neimash, AS Nikolenko, VV Strelchuk, PY Shepeliavyi, PM Litvinchuk, ... Semiconductor physics, quantum electronics & optoelectronics 22 (2), 2019 | 1 | 2019 |
| Surface-barrier uv detectors based on wide bandgap semiconductors VP Makhniy, VV Melnyk, YV Vorobiev Telecommunications and Radio Engineering 77 (19), 2018 | 1 | 2018 |
| Tin-induced crystallization of amorphous silicon under pulsed laser irradiation VB Neimash, V Melnyk, LL Fedorenko, PY Shepelyavyi, VV Strilchuk, ... Ukrainian journal of physics 62 (9), 806-806, 2017 | 1 | 2017 |
| Raman scattering in the process of tin-induced crystallization of amorphous silicon V Neimash, G Dovbeshko, P Shepelyavyi, V Danko, V Melnyk, M Isaiev, ... Ukrainian journal of physics 61 (2), 143-143, 2016 | 1 | 2016 |
| UV detector with internal gain based on SnO-ZnSe heterostructure. V Makhniy, V Melnyk, I Orletskii Technical Physics Letters 37 (4), 2011 | 1 | 2011 |
| Electrical properties of UV detectors based on zinc selenide with modified surface barrier VP Makhniy, VV Melnyk, IV Tkachenko, PN Gorley, ZJ Horváth, PP Horley, ... physica status solidi (c), 1039-1043, 2003 | 1 | 2003 |
| Surface ZnSe: Ca layers with hole conductivity VP Makhniy, MM Berezovskiy, OV Kinzerska, VV Melnyk Технология и конструирование в электронной аппаратуре, 31-35, 2019 | | 2019 |
| Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation VB Neimash, VV Melnyk, LL Fedorenko, PY Shepeliavyi, VV Strelchuk, ... Semiconductor physics, quantum electronics & optoelectronics, 396-405, 2017 | | 2017 |
| Research Article Nanocrystals Growth Control during Laser Annealing of Sn:(𝛼-Si) Composites V Neimash, P Shepelyavyi, G Dovbeshko, AO Goushcha, M Isaiev, ... | | 2016 |
| Tin induced a-Si crystallization in thin films of Si-Sn alloys V Poroshin, P Shepeliavyi, V Yukhymchuk, V Melnyk, A Kuzmich, ... Journal of Applied Physics 114 (21), 2013 | | 2013 |
| UV photoelectric detector with incorporated internal gain VP Makhniy, VV Melnyk, VD Ryzhikov, SN Galkin, GM Onishchenko Telecommunications and Radio Engineering 71 (15), 2012 | | 2012 |
