| Characterization of bulk grown GaN and AlN single crystal materials B Raghothamachar, J Bai, M Dudley, R Dalmau, D Zhuang, Z Herro, ... Journal of crystal growth 287 (2), 349-353, 2006 | 30 | 2006 |
| Rapid synthesis of gallium nitride powder H Wu, J Hunting, K Uheda, L Lepak, P Konkapaka, FJ DiSalvo, ... Journal of crystal growth 279 (3), 303-310, 2005 | 29 | 2005 |
| Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique P Konkapaka, B Raghothamachar, M Dudley, Y Makarov, MG Spencer Journal of crystal growth 289 (1), 140-144, 2006 | 18 | 2006 |
| Bulk GaN growth by gallium vapor transport technique H Wu, P Konkapaka, Y Makarov, MG Spencer physica status solidi (c) 2 (7), 2032-2035, 2005 | 6 | 2005 |
| Rapid Growth of Bulk GaN Crystal Using GaN Powder as Source Material H Wu, J Spinelli, P Konkapaka, MG Spencer MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 892, 757, 2006 | 2 | 2006 |
| Rapid growth of bulk GaN crystal using GaN powder as source material H Wu, J Spinelli, P Konkapaka, M Spencer MRS Proceedings 892, 0892-FF30-01, 2005 | 2 | 2005 |
| GaN bulk growth by Ga vapor transport P Konkapaka, Y Makarov, MG Spencer, H Wu US Patent 7,867,335, 2011 | 1* | 2011 |
| Growth and Characterization of bulk GaN by Ga Vapor Transport P Konkapaka, H Wu, Y Makarov, MG Spencer MRS Proceedings 831, E11. 33, 2004 | 1 | 2004 |
| Tool sensitivity analysis using neural net technique for yield improvement PK Konkapaka, A Pinto, P Giotta, S Bhattacharya, G Verma, S Murashov, ... Advanced Semiconductor Manufacturing Conference, 2009. ASMC'09. IEEE/SEMI …, 2009 | | 2009 |
| Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport From a Gallium Oxide (Ga~ 2O~ 3) Powder Source B Raghothamachar, P Konkapaka, H Wu, M Dudley, M Spencer MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 892, 781, 2006 | | 2006 |
| Bulk GaN growth and Characterization PP Konkapaka | | 2005 |
| Thick GaN Layer Grown by Ga Vapor Transport Technique H Wu, P Konkapaka, Y Makarov, MG Spencer SELECTED TOPICS IN ELECTRONICS AND SYSTEMS 35, 121, 2005 | | 2005 |
| Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source B Raghothamachar, P Konkapaka, H Wu, M Dudley, M Spencer MRS Proceedings 892, 0892-FF30-07, 2005 | | 2005 |
| Thick GaN layer grown by Ga vapor transport technique H Wu, P Konkapaka, Y Makarov, MG Spencer International journal of high speed electronics and systems 14 (03), 745-749, 2004 | | 2004 |
| X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds B Raghothamachar, M Dudley, B Wang, M Callahan, D Bliss, ... MRS Proceedings 831, E8. 23, 2004 | | 2004 |
