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Hongtao Xu
Hongtao Xu
Verified email at fudan.edu.cn
Title
Cited by
Cited by
Year
Universal front end module for networking device
N Rohani, H Xu, Y Tan
US Patent 8,364,102, 2013
1892013
The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs
C Sanabria, A Chakraborty, H Xu, MJ Rodwell, UK Mishra, RA York
IEEE electron device letters 27 (1), 19-21, 2005
1252005
A flip-chip-packaged 25.3 dBm class-D outphasing power amplifier in 32 nm CMOS for WLAN application
H Xu, Y Palaskas, A Ravi, M Sajadieh, MA El-Tanani, K Soumyanath
IEEE Journal of Solid-State Circuits 46 (7), 1596-1605, 2011
1152011
Tunable microwave integrated circuits using BST thin film capacitors with device structure optimization
H Xu, NK Pervez, RA York
Integrated Ferroelectrics 77 (1), 27-35, 2005
1122005
A 2.4-GHz 20–40-MHz channel WLAN digital outphasing transmitter utilizing a delay-based wideband phase modulator in 32-nm CMOS
A Ravi, P Madoglio, H Xu, K Chandrashekar, M Verhelst, S Pellerano, ...
IEEE Journal of Solid-State Circuits 47 (12), 3184-3196, 2012
1082012
A C-band high-dynamic range GaN HEMT low-noise amplifier
H Xu, C Sanabria, A Chini, S Keller, UK Mishra, RA York
IEEE Microwave and Wireless Components Letters 14 (6), 262-264, 2004
982004
Monolithic flexible power amplifier using integrated tunable matching networks
N Rohani, H Xu, Y Tan
US Patent 7,567,129, 2009
972009
A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz
H Xu, S Gao, S Heikman, SI Long, UK Mishra, RA York
IEEE microwave and wireless components letters 16 (1), 22-24, 2005
972005
A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement
W Tai, H Xu, A Ravi, H Lakdawala, O Bochobza-Degani, LR Carley, ...
IEEE Journal of Solid-State Circuits 47 (7), 1646-1658, 2012
912012
A 20dBm 2.4 GHz digital outphasing transmitter for WLAN application in 32nm CMOS
P Madoglio, A Ravi, H Xu, K Chandrashekar, M Verhelst, S Pellerano, ...
2012 IEEE International Solid-State Circuits Conference, 168-170, 2012
592012
13.6 A 2.4 GHz WLAN digital polar transmitter with synthesized digital-to-time converter in 14nm trigate/FinFET technology for IoT and wearable applications
P Madoglio, H Xu, K Chandrashekar, L Cuellar, M Faisal, WY Li, HS Kim, ...
2017 IEEE International Solid-State Circuits Conference (ISSCC), 226-227, 2017
572017
A broadband switched-transformer digital power amplifier for deep back-off efficiency enhancement
Y Yin, T Li, L Xiong, Y Li, H Min, N Yan, H Xu
IEEE Journal of Solid-State Circuits 55 (11), 2997-3008, 2020
492020
Wi-Fi RF energy harvesting for battery-free wearable radio platforms
V Talla, S Pellerano, H Xu, A Ravi, Y Palaskas
2015 IEEE International Conference on RFID (RFID), 47-54, 2015
472015
Microwave class-F and inverse class-F power amplifiers designs using GaN technology and GaAs pHEMT
S Gao, P Butterworth, A Sambell, C Sanabria, H Xu, S Heikman, U Mishra, ...
2006 European Microwave Integrated Circuits Conference, 493-496, 2006
462006
A gesture air-writing tracking method that uses 24 GHz SIMO radar SoC
P Wang, J Lin, F Wang, J Xiu, Y Lin, N Yan, H Xu
IEEE Access 8, 152728-152741, 2020
432020
A compact dual-band digital Doherty power amplifier using parallel-combining transformer for cellular NB-IoT applications
Y Yin, L Xiong, Y Zhu, B Chen, H Min, H Xu
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 408-410, 2018
392018
A highly linear 25dBm outphasing power amplifier in 32nm CMOS for WLAN application
H Xu, Y Palaskas, A Ravi, K Soumyanath
2010 Proceedings of ESSCIRC, 306-309, 2010
392010
A compact dual-band digital polar Doherty power amplifier using parallel-combining transformer
Y Yin, L Xiong, Y Zhu, B Chen, H Min, H Xu
IEEE Journal of Solid-State Circuits 54 (6), 1575-1585, 2019
382019
Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/thin films with AlGaN/GaN HEMT circuits
H Xu, NK Pervez, PJ Hansen, L Shen, S Keller, UK Mishra, RA York
IEEE Electron Device Letters 25 (2), 49-51, 2004
372004
Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs
C Sanabria, H Xu, T Palacios, A Chakraborty, S Heikman, UK Mishra, ...
IEEE transactions on microwave theory and techniques 53 (2), 762-769, 2005
362005
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