| Bulk growth of large area SiC crystals AR Powell, JJ Sumakeris, Y Khlebnikov, MJ Paisley, RT Leonard, ... Materials Science Forum 858, 5-10, 2016 | 78 | 2016 |
| Mapping of lattice strain in 4H-SiC crystals by synchrotron double-crystal x-ray topography J Guo, Y Yang, B Raghothamachar, M Dudley, S Stoupin Journal of Electronic Materials 47, 903-909, 2018 | 31 | 2018 |
| Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial J Guo, Y Yang, B Raghothamachar, T Kim, M Dudley, J Kim Journal of Crystal Growth 480, 119-125, 2017 | 28 | 2017 |
| High quality AlN single crystal substrates for AlGaN-based devices R Dalmau, HS Craft, J Britt, E Paisley, B Moody, JQ Guo, YJ Ji, ... Materials Science Forum 924, 923-926, 2018 | 26 | 2018 |
| Prismatic slip in PVT-grown 4H-SiC crystals J Guo, Y Yang, B Raghothamachar, J Kim, M Dudley, G Chung, ... Journal of Electronic Materials 46, 2040-2044, 2017 | 24 | 2017 |
| Direct determination of burgers vectors of threading mixed dislocations in 4H-SiC grown by PVT method J Guo, Y Yang, F Wu, J Sumakeris, R Leonard, O Goue, ... Journal of Electronic Materials 45, 2045-2050, 2016 | 17 | 2016 |
| Dislocation characterization in 4H-SiC crystals JJ Sumakeris, RT Leonard, E Deyneka, Y Khlebnikov, AR Powell, ... Materials Science Forum 858, 393-396, 2016 | 12 | 2016 |
| Synchrotron X-ray topography analysis of double Shockley stacking faults in 4H-SiC wafers Y Yang, JQ Guo, O Goue, B Raghothamachar, M Dudley, GY Chung, ... Materials Science Forum 858, 105-108, 2016 | 11 | 2016 |
| Using ray tracing simulations for direct determination of burgers vectors of threading mixed dislocations in 4h-sic c-plane wafers grown by pvt method JQ Guo, Y Yang, FZ Wu, JJ Sumakeris, RT Leonard, O Goue, ... Materials Science Forum 858, 15-18, 2016 | 11 | 2016 |
| Effect of doping concentration variations in PVT-grown 4H-SiC wafers Y Yang, J Guo, O Goue, B Raghothamachar, M Dudley, G Chung, ... Journal of Electronic Materials 45, 2066-2070, 2016 | 11 | 2016 |
| Characterization of strain due to nitrogen doping concentration variations in heavy doped 4H-SiC Y Yang, J Guo, B Raghothamachar, X Chan, T Kim, M Dudley Journal of Electronic Materials 47, 938-943, 2018 | 10 | 2018 |
| Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications M Dudley, H Wang, J Guo, Y Yang, B Raghothamachar, J Zhang, ... MRS Advances 1, 91-102, 2016 | 9 | 2016 |
| Stacking fault formation via 2D nucleation in PVT grown 4H-SiC FZ Wu, HH Wang, Y Yang, JQ Guo, B Raghothamachar, M Dudley, ... Materials Science Forum 821, 85-89, 2015 | 9 | 2015 |
| In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers Y Yang, JQ Guo, B Raghothamachar, M Dudley, S Weit, AN Danilewsky, ... Materials Science Forum 924, 172-175, 2018 | 8 | 2018 |
| Optimization of 150 mm 4H SiC substrate crystal quality I Manning, GY Chung, E Sanchez, Y Yang, JQ Guo, O Goue, ... Materials Science Forum 924, 11-14, 2018 | 8 | 2018 |
| Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers Y Yang, J Guo, OY Goue, JG Kim, B Raghothamachar, M Dudley, ... Journal of Electronic Materials 47, 1218-1222, 2018 | 8 | 2018 |
| Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers Y Yang, J Guo, O Goue, B Raghothamachar, M Dudley, G Chung, ... Journal of Crystal Growth 452, 35-38, 2016 | 8 | 2016 |
| Studies on lattice strain variation due to nitrogen doping by synchrotron x-ray contour mapping technique in PVT-grown 4H-SiC crystals T Ailihumaer, Y Yang, J Guo, B Raghothamachar, M Dudley Journal of Electronic Materials 48, 3363-3369, 2019 | 7 | 2019 |
| Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method J Guo, Y Yang, F Wu, J Sumakeris, R Leonard, O Goue, ... Journal of Crystal Growth 452, 39-43, 2016 | 7 | 2016 |
| Mapping of threading screw dislocations in 4H n-type SiC wafers A Ellison, E Sörman, B Sundqvist, B Magnusson, Y Yang, JQ Guo, ... Materials Science Forum 858, 376-379, 2016 | 6 | 2016 |
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)Verified email at stonybrook.edu
